GS82583ED18/36GK-675/625/550/500 Up to 675 MHz 260-Pin BGA 288Mb SigmaQuad-IIIe 1.3V V Commercial Temp DD Burst of 4 SRAM Industrial Temp 1.2V, 1.3V, or 1.5V V DDQ Features Clocking and Addressing Schemes 8Mb x 36 and 16Mb x 18 organizations available The GS82583ED18/36GK SigmaQuad-IIIe SRAMs are synchronous devices. They employ three pairs of positive and 675 MHz maximum operating frequency negative input clocks one pair of master clocks, CK and CK, 675 MT/s peak transaction rate (in millions per second) and two pairs of write data clocks, KD 1:0 and KD 1:0 . All 97 Gb/s peak data bandwidth (in x36 devices) six input clocks are single-ended that is, each is received by a Separate I/O DDR Data Buses dedicated input buffer. Non-multiplexed SDR Address Bus One operation - Read or Write - per clock cycle CK and CK are used to latch address and control inputs, and to Burst of 4 Read and Write operations control all output timing. KD 1:0 and KD 1:0 are used solely 3 cycle Read Latency to latch data inputs. 1.3V nominal core voltage 1.2V, 1.3V, or 1.5V HSTL I/O interface Each internal read and write operation in a SigmaQuad-IIIe B4 Configurable ODT (on-die termination) SRAM is four times wider than the device I/O bus. An input ZQ pin for programmable driver impedance data bus de-multiplexer is used to accumulate incoming data before it is simultaneously written to the memory array. An ZT pin for programmable ODT impedance output data multiplexer is used to capture the data produced IEEE 1149.1 JTAG-compliant Boundary Scan from a single memory array read and then route it to the 260-pin, 14 mm x 22 mm, 1 mm ball pitch, 6/6 RoHS- appropriate output drivers as needed. Therefore, the address compliant BGA package field of a SigmaQuad-IIIe B4 SRAM is always two address pins less than the advertised index depth (e.g. the 16M x 18 has SigmaQuad-IIIe Family Overview 4M addressable index). SigmaQuad-IIIe SRAMs are the Separate I/O half of the SigmaQuad-IIIe/SigmaDDR-IIIe family of high performance SRAMs. Although very similar to GSI s second generation of networking SRAMs (the SigmaQuad-II/SigmaDDR-II family), these third generation devices offer several new features that help enable significantly higher performance. Parameter Synopsis V Speed Grade Max Operating Frequency Read Latency DD -675 675 MHz 3 cycles 1.25V to 1.35V -625 625 MHz 3 cycles 1.25V to 1.35V -550 550 MHz 3 cycles 1.25V to 1.35V -500 500 MHz 3 cycles 1.25V to 1.35V Rev: 1.07 12/2017 1/26 2014, GSI Technology Specifications cited are subject to change without notice. For latest documentation see GS82583ED18/36GK-675/625/550/500 16M x 18 Pinout (Top View) 1 2 3 4 5 6 7 8 9 10 11 12 13 NC MCH V V V V MCL V V V V ZQ PZT1 A DD DDQ DD DDQ DDQ DD DDQ DD (RSVD) (CFG) MCH NC MCH V NU V NU V V B MVQ PZT0 D0 Q0 SS O SS I SS SS (B4M) (RSVD) (SIOM) V V V V V V NU V NU Q17 D17 SA SA C DDQ DDQ SS DD SS DDQ I DDQ O V NU V NU V V V V D SA SA SA D1 Q1 SS O SS I DDQ DDQ SS SS Q16 V D16 V V SA V SA V V NU V NU E DDQ DD SS SS SS DD I DDQ O V NU V NU V V V V V SA SA D2 Q2 F SS O SS I DD DDQ DD SS SS NU NU V V NU NU G Q15 D15 SA MZT1 SA D3 Q3 O I SS SS I O V V V V V NU V NU Q14 D14 SA W SA H DDQ DDQ DDQ DDQ DDQ I DDQ O V NU V NU V V V V V J SA SA D4 Q4 SS O SS I SS SS SS SS SS CQ1 V V V KD1 V CK V KD0 V V V CQ0 K DDQ REF DD DD DD DD REF DDQ V V V V V V CQ1 QVLD1 KD1 CK KD0 QVLD0 CQ0 L SS ss DDQ DDQ SS SS V V V V V NU V NU V M Q13 D13 SA SA SS SS SS SS SS I SS O SS NU V NU V V V V V DLL R MCH D5 Q5 N O DDQ I DDQ DDQ DDQ DDQ DDQ NU NU V V NU NU P Q12 D12 SA MZT0 SA D6 Q6 O I SS SS I O V Q11 V D11 MCH V V V RST NU V NU V R SS SS DD DDQ DD I SS O SS NU V NU V V V V V V SA SA D7 Q7 T O DDQ I DD SS SS SS DD DDQ NC NC NC V V V V NU V NU V U Q10 D10 SS SS DDQ DDQ I SS O SS (576 Mb) (RSVD) (1152 Mb) SA NU I NU V NU V V V V V V D8 Q8 V O DDQ I DDQ SS DD SS DDQ DDQ (x18) (B2) NC V V NU V NU V W Q9 D9 TCK MCL MCL TMS SS SS I SS O SS (RSVD) NC V V V V TDO ZT MCL TDI V V V V Y DD DDQ DD DDQ DDQ DD DDQ DD (RSVD) Notes: 1. Pins 6W, 7A, 8W, and 8Y must be tied Low in this device. 2. Pins 5R and 9N must be tied High in this device. 3. Pin 6A is defined as mode pin CFG in the pinout standard. It must be tied High in this device to select x18 configuration. 4. Pin 8B is defined as mode pin SIOM in the pinout standard. It must be tied High in this device to select Separate I/O configuration. 5. Pin 6B is defined as mode pin B4M in the pinout standard. It must be tied High in this device to select Burst-of-4 configuration. 6. Pin 6V is defined as address pin SA for x18 devices. It is used in this device. 7. Pin 8V is defined as address pin SA for B2 devices. It is unused in this device, and must be left unconnected or driven Low. 8. Pin 5U is reserved as address pin SA for 576 Mb devices. It is a true no connect in this device. 9. Pin 9U is reserved as address pin SA for 1152 Mb devices. It is a true no connect in this device. Rev: 1.07 12/2017 2/26 2014, GSI Technology Specifications cited are subject to change without notice. For latest documentation see