X-On Electronics has gained recognition as a prominent supplier of GS8342Q19BGD-357I SRAM across the USA, India, Europe, Australia, and various other global locations. GS8342Q19BGD-357I SRAM are a product manufactured by GSI Technology. We provide cost-effective solutions for SRAM, ensuring timely deliveries around the world.

GS8342Q19BGD-357I GSI Technology

GS8342Q19BGD-357I electronic component of GSI Technology
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Part No.GS8342Q19BGD-357I
Manufacturer: GSI Technology
Category: SRAM
Description: SRAM 1.8 or 1.5V 2M x 18 36M
Datasheet: GS8342Q19BGD-357I Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
15: USD 80.4267 ea
Line Total: USD 1206.4 
Availability - 0
MOQ: 15  Multiples: 15
Pack Size: 15
Availability Price Quantity
0
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ : 15
Multiples : 15
15 : USD 80.4267
30 : USD 78.6589
60 : USD 77.8563
105 : USD 72.6109

   
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RoHS - XON
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We are delighted to provide the GS8342Q19BGD-357I from our SRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the GS8342Q19BGD-357I and other electronic components in the SRAM category and beyond.

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GS8342Q07/10/19/37BD-357/333/300/250/200 357 MHz200 MHz 165-Bump BGA TM 36Mb SigmaQuad-II+ 1.8 V V Commercial Temp DD Industrial Temp Burst of 2 SRAM 1.8 V and 1.5 V I/O are just one element in a family of low power, low voltage Features HSTL I/O SRAMs designed to operate at the speeds needed to 2.0 Clock Latency implement economical high performance networking systems. Simultaneous Read and Write SigmaQuad Interface JEDEC-standard pinout and package Dual Double Data Rate interface Clocking and Addressing Schemes Byte Write controls sampled at data-in time On-Die Termination (ODT) on Data (D), Byte Write (BW), The GS8342Q07/10/19/37BD SigmaQuad-II+ SRAMs are and Clock (K, K) inputs synchronous devices. They employ two input register clock Burst of 2 Read and Write inputs, K and K. K and K are independent single-ended clock 1.8 V +100/100 mV core power supply inputs, not differential inputs to a single differential clock input 1.5 V or 1.8 V HSTL Interface buffer. Pipelined read operation Fully coherent read and write pipelines Each internal read and write operation in a SigmaQuad-II+ B2 ZQ pin for programmable output drive strength RAM is two times wider than the device I/O bus. An input data Data Valid Pin (QVLD) Support bus de-multiplexer is used to accumulate incoming data before IEEE 1149.1 JTAG-compliant Boundary Scan it is simultaneously written to the memory array. An output 165-bump, 13 mm x 15 mm, 1 mm bump pitch BGA package data multiplexer is used to capture the data produced from a RoHS-compliant 165-bump BGA package available single memory array read and then route it to the appropriate output drivers as needed. Therefore the address field of a SigmaQuad-II+ B2 RAM is always one address pin less than SigmaQuad Family Overview the advertised index depth (e.g., the 4M x 8 has a 2M The GS8342Q07/10/19/37BD are built in compliance with the addressable index). SigmaQuad-II+ SRAM pinout standard for Separate I/O synchronous SRAMs. They are 37,748,736-bit (36Mb) SRAMs. The GS8342Q07/10/19/37BD SigmaQuad SRAMs Parameter Synopsis -357 -333 -300 -250 -200 tKHKH 2.8 ns 3.0 ns 3.3 ns 4.0 ns 5.0 ns tKHQV 0.45 ns 0.45 ns 0.45 ns 0.45 ns 0.45 ns Rev: 1.02a 8/2017 1/28 2011, GSI Technology Specifications cited are subject to change without notice. For latest documentation see GS8342Q07/10/19/37BD-357/333/300/250/200 4M x 8 SigmaQuad-II SRAMTop View 1 2 3 4 5 6 7 8 9 10 11 NC/SA NC/SA A CQ SA W NW1 K R SA SA CQ (72Mb) (144Mb) NC/SA B NC NC NC SA K NW0 SA NC NC Q3 (288Mb) C NC NC NC V SA SA SA V NC NC D3 SS SS D NC D4 NC V V V V V NC NC NC SS SS SS SS SS E NC NC Q4 V V V V V NC D2 Q2 DDQ SS SS SS DDQ F NC NC NC V V V V V NC NC NC DDQ DD SS DD DDQ G NC D5 Q5 V V V V V NC NC NC DDQ DD SS DD DDQ H Doff V V V V V V V V V ZQ REF DDQ DDQ DD SS DD DDQ DDQ REF J NC NC NC V V V V V NC Q1 D1 DDQ DD SS DD DDQ K NC NC NC V V V V V NC NC NC DDQ DD SS DD DDQ L NC Q6 D6 V V V V V NC NC Q0 DDQ SS SS SS DDQ M NC NC NC V V V V V NC NC D0 SS SS SS SS SS N NC D7 NC V SA SA SA V NC NC NC SS SS P NC NC Q7 SA SA QVLD SA SA NC NC NC R TDO TCK SA SA SA ODT SA SA SA TMS TDI 11 x 15 Bump BGA13 x 15 mm Body1 mm Bump Pitch Notes: 1. NW0 controls writes to D0:D3. NW1 controls writes to D4:D7. 2. Pins A2, A7, and B5 are the expansion addresses. Rev: 1.02a 8/2017 2/28 2011, GSI Technology Specifications cited are subject to change without notice. For latest documentation see

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory
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