X-On Electronics has gained recognition as a prominent supplier of GS8342T37BGD-400 SRAM across the USA, India, Europe, Australia, and various other global locations. GS8342T37BGD-400 SRAM are a product manufactured by GSI Technology. We provide cost-effective solutions for SRAM, ensuring timely deliveries around the world.

GS8342T37BGD-400 GSI Technology

GS8342T37BGD-400 electronic component of GSI Technology
GS8342T37BGD-400 GSI Technology
GS8342T37BGD-400 SRAM
GS8342T37BGD-400  Semiconductors

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Part No. GS8342T37BGD-400
Manufacturer: GSI Technology
Category: SRAM
Description: SRAM 1.8 or 1.5V 1M x 36 36M
Datasheet: GS8342T37BGD-400 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
15: USD 58.707 ea
Line Total: USD 880.6 
Availability - 0
MOQ: 15  Multiples: 15
Pack Size: 15
Availability Price Quantity
0
Ship by Tue. 29 Apr to Thu. 01 May
MOQ : 15
Multiples : 15
15 : USD 58.707
30 : USD 57.233
60 : USD 55.803
105 : USD 53.779
255 : USD 51.656
510 : USD 50.688
1005 : USD 50.292
2505 : USD 50.27

   
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RoHS - XON
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We are delighted to provide the GS8342T37BGD-400 from our SRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the GS8342T37BGD-400 and other electronic components in the SRAM category and beyond.

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GS8342T07/10/19/37BD-450/400/350/333/300 TM 450 MHz300 MHz 165-Bump BGA 36Mb SigmaDDR-II+ 1.8 V V Commercial Temp DD Burst of 2 SRAM Industrial Temp 1.8 V or 1.5 V I/O The GS8342T07/10/19/37BD SigmaDDR-II+ SRAMs are just Features one element in a family of low power, low voltage HSTL I/O 2.0 Clock Latency SRAMs designed to operate at the speeds needed to implement Simultaneous Read and Write SigmaDDR Interface economical high performance networking systems. Common I/O bus JEDEC-standard pinout and package Double Data Rate interface Clocking and Addressing Schemes Byte Write controls sampled at data-in time Burst of 2 Read and Write The GS8342T07/10/19/37BD SigmaDDR-II+ SRAMs are On-Die Termination (ODT) on Data (D), Byte Write (BW), synchronous devices. They employ two input register clock and Clock (K, K) inputs inputs, K and K. K and K are independent single-ended clock 1.8 V +100/100 mV core power supply inputs, not differential inputs to a single differential clock input 1.5 V or 1.8 V HSTL Interface buffer. Pipelined read operation with self-timed Late Write Fully coherent read and write pipelines Each internal read and write operation in a SigmaDDR-II+ B2 ZQ pin for programmable output drive strength RAM is two times wider than the device I/O bus. An input data Data Valid pin (QVLD) Support bus de-multiplexer is used to accumulate incoming data before IEEE 1149.1 JTAG-compliant Boundary Scan it is simultaneously written to the memory array. An output 165-bump, 13 mm x 15 mm, 1 mm bump pitch BGA package data multiplexer is used to capture the data produced from a RoHS-compliant 165-bump BGA package available single memory array read and then route it to the appropriate output drivers as needed. Therefore the address field of a SigmaDDR-II+ B2 RAM is always one address pin less than SigmaDDR Family Overview the advertised index depth (e.g., the 4M x 8 has a 2M The GS8342T07/10/19/37BD are built in compliance with the addressable index). SigmaDDR-II+ SRAM pinout standard for Common I/O synchronous SRAMs. They are 37,748,736 (36Mb) SRAMs. Parameter Synopsis -450 -400 -350 -333 -300 tKHKH 2.22 ns 2.5 ns 2.86 ns 3.0 ns 3.3 ns tKHQV 0.45 ns 0.45 ns 0.45 ns 0.45 ns 0.45 ns Rev: 1.02a 8/2017 1/29 2011, GSI Technology Specifications cited are subject to change without notice. For latest documentation see GS8342T07/10/19/37BD-450/400/350/333/300 4M x 8 SigmaDDR-II+ SRAMTop View 1 2 3 4 5 6 7 8 9 10 11 NC/SA NC/SA A CQ SA R/W NW1 K LD SA SA CQ (72Mb) (144Mb) NC/SA B NC NC NC SA K NW0 SA NC NC DQ3 (288Mb) C NC NC NC V SA SA SA V NC NC NC SS SS D NC NC NC V V V V V NC NC NC SS SS SS SS SS E NC NC DQ4 V V V V V NC NC DQ2 DDQ SS SS SS DDQ F NC NC NC V V V V V NC NC NC DDQ DD SS DD DDQ G NC NC DQ5 V V V V V NC NC NC DDQ DD SS DD DDQ H Doff V V V V V V V V V ZQ REF DDQ DDQ DD SS DD DDQ DDQ REF J NC NC NC V V V V V NC DQ1 NC DDQ DD SS DD DDQ K NC NC NC V V V V V NC NC NC DDQ DD SS DD DDQ L NC DQ6 NC V V V V V NC NC DQ0 DDQ SS SS SS DDQ M NC NC NC V V V V V NC NC NC SS SS SS SS SS N NC NC NC V SA SA SA V NC NC NC SS SS P NC NC DQ7 SA SA QVLD SA SA NC NC NC R TDO TCK SA SA SA ODT SA SA SA TMS TDI 11 x 15 Bump BGA13 x 15 mm Body1 mm Bump Pitch Notes: 1. NW0 controls writes to DQ0:DQ3 NW1 controls writes to DQ4:DQ7. 2. Pins A2, A7, and B5 are the expansion addresses. Rev: 1.02a 8/2017 2/29 2011, GSI Technology Specifications cited are subject to change without notice. For latest documentation see

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory
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