X-On Electronics has gained recognition as a prominent supplier of GS8342TT37BGD-450I SRAM across the USA, India, Europe, Australia, and various other global locations. GS8342TT37BGD-450I SRAM are a product manufactured by GSI Technology. We provide cost-effective solutions for SRAM, ensuring timely deliveries around the world.

GS8342TT37BGD-450I GSI Technology

GS8342TT37BGD-450I electronic component of GSI Technology
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Part No.GS8342TT37BGD-450I
Manufacturer: GSI Technology
Category: SRAM
Description: SRAM 1.8 or 1.5V 1M x 36 36M
Datasheet: GS8342TT37BGD-450I Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
15: USD 77.8735 ea
Line Total: USD 1168.1 
Availability - 0
MOQ: 15  Multiples: 15
Pack Size: 15
Availability Price Quantity
0
Ship by Fri. 27 Dec to Tue. 31 Dec
MOQ : 15
Multiples : 15
15 : USD 77.8735
30 : USD 76.1618
60 : USD 75.3847
105 : USD 70.3058

   
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We are delighted to provide the GS8342TT37BGD-450I from our SRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the GS8342TT37BGD-450I and other electronic components in the SRAM category and beyond.

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GS8342TT07/10/19/37BD-450/400/350/333/300 TM 450 MHz300 MHz 165-Bump BGA 36Mb SigmaDDR-II+ 1.8 V V Commercial Temp DD Burst of 2 SRAM Industrial Temp 1.8 V or 1.5 V I/O Features 2.0 Clock Latency Simultaneous Read and Write SigmaDDR Interface Common I/O bus JEDEC-standard pinout and package Double Data Rate interface Byte Write controls sampled at data-in time Burst of 2 Read and Write Dual-Range On-Die Termination (ODT) on Data (D), Byte Write (BW), and Clock (K, K) inputs 1.8 V +100/100 mV core power supply 1.5 V or 1.8 V HSTL Interface Pipelined read operation with self-timed Late Write Fully coherent read and write pipelines ZQ pin for programmable output drive strength Bottom View Data Valid pin (QVLD) Support 165-Bump, 13 mm x 15 mm BGA IEEE 1149.1 JTAG-compliant Boundary Scan 1 mm Bump Pitch, 11 x 15 Bump Array 165-bump, 13 mm x 15 mm, 1 mm bump pitch BGA package RoHS-compliant 165-bump BGA package available SigmaDDR Family Overview Clocking and Addressing Schemes The GS8342TT07/10/19/37BD are built in compliance with The GS8342TT07/10/19/37BD SigmaDDR-II+ SRAMs are the SigmaDDR-II+ SRAM pinout standard for Common I/O synchronous devices. They employ two input register clock synchronous SRAMs. They are 37,748,736 (36Mb) SRAMs. inputs, K and K. K and K are independent single-ended clock The GS8342TT07/10/19/37BD SigmaDDR-II+ SRAMs are inputs, not differential inputs to a single differential clock input just one element in a family of low power, low voltage HSTL buffer. I/O SRAMs designed to operate at the speeds needed to implement economical high performance networking systems. Because Common I/O SigmaDDR-II+ RAMs always transfer data in two packets, A0 is internally set to 0 for the first read or write transfer, and automatically incremented by 1 for the next transfer. Because the LSB is tied off internally, the address field of a SigmaDDR-II+ B2 RAM is always one address pin less than the advertised index depth force return (e.g., the 2M x 18 has a 1M addressable index). Parameter Synopsis -450 -400 -350 -333 -300 tKHKH 2.22 ns 2.5 ns 2.86 ns 3.0 ns 3.3 ns tKHQV 0.45 ns 0.45 ns 0.45 ns 0.45 ns 0.45 ns Rev: 1.01a 8/2017 1/30 2011, GSI Technology Specifications cited are subject to change without notice. For latest documentation see GS8342TT07/10/19/37BD-450/400/350/333/300 4M x 8 SigmaDDR-II+ SRAMTop View 1 2 3 4 5 6 7 8 9 10 11 NC/SA NC/SA A CQ SA R/W NW1 K LD SA SA CQ (72Mb) (144Mb) NC/SA B NC NC NC SA K NW0 SA NC NC DQ3 (288Mb) C NC NC NC V SA SA SA V NC NC NC SS SS D NC NC NC V V V V V NC NC NC SS SS SS SS SS E NC NC DQ4 V V V V V NC NC DQ2 DDQ SS SS SS DDQ F NC NC NC V V V V V NC NC NC DDQ DD SS DD DDQ G NC NC DQ5 V V V V V NC NC NC DDQ DD SS DD DDQ H Doff V V V V V V V V V ZQ REF DDQ DDQ DD SS DD DDQ DDQ REF J NC NC NC V V V V V NC DQ1 NC DDQ DD SS DD DDQ K NC NC NC V V V V V NC NC NC DDQ DD SS DD DDQ L NC DQ6 NC V V V V V NC NC DQ0 DDQ SS SS SS DDQ M NC NC NC V V V V V NC NC NC SS SS SS SS SS N NC NC NC V SA SA SA V NC NC NC SS SS P NC NC DQ7 SA SA QVLD SA SA NC NC NC R TDO TCK SA SA SA ODT SA SA SA TMS TDI 11 x 15 Bump BGA13 x 15 mm Body1 mm Bump Pitch Notes: 1. NW0 controls writes to DQ0:DQ3 NW1 controls writes to DQ4:DQ7. 2. Pins A2, A7, and B5 are the expansion addresses. Rev: 1.01a 8/2017 2/30 2011, GSI Technology Specifications cited are subject to change without notice. For latest documentation see

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory
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