X-On Electronics has gained recognition as a prominent supplier of GS84018CGB-150I SRAM across the USA, India, Europe, Australia, and various other global locations. GS84018CGB-150I SRAM are a product manufactured by GSI Technology. We provide cost-effective solutions for SRAM, ensuring timely deliveries around the world.

GS84018CGB-150I GSI Technology

GS84018CGB-150I electronic component of GSI Technology
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Part No.GS84018CGB-150I
Manufacturer: GSI Technology
Category: SRAM
Description: SRAM 2.5 or 3.3V 256K x 18 4M
Datasheet: GS84018CGB-150I Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
84: USD 7.72 ea
Line Total: USD 648.48 
Availability - 0
MOQ: 84  Multiples: 84
Pack Size: 84
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0
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 84
Multiples : 84
84 : USD 7.72

   
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We are delighted to provide the GS84018CGB-150I from our SRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the GS84018CGB-150I and other electronic components in the SRAM category and beyond.

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GS84018/32/36CB-250/200/166/150 BGA 250 MHz150 MHz 256K x 18, 128K x 32, 128K x 36 Commercial Temp 3.3 V V DD 4Mb Sync Burst SRAMs Industrial Temp 3.3 V and 2.5 V I/O internally and are controlled by ADV. The burst address Features counter may be configured to count in either linear or FT pin for user-configurable flow through or pipelined interleave order with the Linear Burst Order (LBO) input. The operation burst function need not be used. New addresses can be loaded Single Cycle Deselect (SCD) operation on every cycle with no degradation of chip performance. 3.3 V +10%/5% core power supply 2.5 V or 3.3 V I/O supply Flow Through/Pipeline Reads LBO pin for Linear or Interleaved Burst mode The function of the Data Output register can be controlled by Internal input resistors on mode pins allow floating mode pins the user via the FT mode pin/bump (pin 14 in the TQFP and Default to Interleaved Pipelined mode bump 5R in the BGA). Holding the FT mode pin/bump low Byte Write (BW) and/or Global Write (GW) operation places the RAM in Flow Through mode, causing output data to Common data inputs and data outputs bypass the Data Output Register. Holding FT high places the Clock control, registered, address, data, and control RAM in Pipelined mode, activating the rising-edge-triggered Internal self-timed write cycle Data Output Register. Automatic power-down for portable applications SCD Pipelined Reads JEDEC-standard 119-bump BGA package The GS84018/32/36C is an SCD (Single Cycle Deselect) RoHS-compliant 119-bump BGA package pipelined synchronous SRAM. DCD (Dual Cycle Deselect) versions are also available. SCD SRAMs pipeline deselect Functional Description commands one stage less than read commands. SCD RAMs begin turning off their outputs immediately after the deselect Applications command has been captured in the input registers. The GS84018/32/36C is a 4,718,592-bit (4,194,304-bit for x32 version) high performance synchronous SRAM with a 2- Byte Write and Global Write bit burst address counter. Although of a type originally Byte write operation is performed by using byte write enable developed for Level 2 Cache applications supporting high (BW) input combined with one or more individual byte write performance CPUs, the device now finds application in signals (Bx). In addition, Global Write (GW) is available for synchronous SRAM applications ranging from DSP main store writing all bytes at one time, regardless of the Byte Write to networking chip set support. The GS84018/32/36A is control inputs. available in a JEDEC standard 100-lead TQFP or 119-Bump Sleep Mode BGA package. Low power (Sleep mode) is attained through the assertion Controls (High) of the ZZ signal, or by stopping the clock (CK). Addresses, data I/Os, chip enables (E1, E2, E3), address burst Memory data is retained during Sleep mode. control inputs (ADSP, ADSC, ADV), and write control inputs Core and Interface Voltages (Bx, BW, GW) are synchronous and are controlled by a The GS84018/32/36C operates on a 3.3 V power supply and all positive-edge-triggered clock input (CK). Output enable (G) inputs/outputs are 3.3 V- and 2.5 V-compatible. Separate and power down control (ZZ) are asynchronous inputs. Burst output power (V ) pins are used to de-couple output noise cycles can be initiated with either ADSP or ADSC inputs. In DDQ from the internal circuit. Burst mode, subsequent burst addresses are generated Parameter Synopsis 250 200 166 150 Unit tCycle 4.0 5.5 6.0 6.7 ns KQ 2.5 3.0 3.5 3.8 ns Pipeline t 3-1-1-1 Curr (X18) 195 170 150 140 MHz Curr (X32/X36) 225 195 185 160 MHz tKQ 5.5 6.5 7.0 7.5 Flow ns tCycle 5.5 6.5 7.0 7.5 Through ns (X18) 160 140 140 128 Curr 2-1-1-1 MHz Curr (X32/X36) 180 160 155 145 Rev: 1.01 9/2014 1/23 2014, GSI Technology Specifications cited are subject to change without notice. For latest documentation see GS84018/32/36CB-250/200/166/150 GS84018C Pad Out119-Bump BGATop View (Package B) 1234567 A V A A ADSP AA V DDQ DDQ B NC E2 AADSC AE3 NC C NC A A V AA NC DD D DQB NC V NC V DQPA NC SS SS NC DQB V E1 V NC DQA E SS SS F V NC V G V DQA V DDQ SS SS DDQ G NC DQB BB ADV NC NC DQA H DQB NC V GW V DQA NC SS SS J V V NC V NC V V DDQ DD DD DD DDQ NC DQB V CK V NC DQA K SS SS L DQB NC NC NC BA DQA NC M V DQB V BW V NC V DDQ SS SS DDQ N DQB NC V A1 V DQA NC SS SS P NC DQPB V A0 V NC DQA SS SS NC A LBO V FT ANC R DD T NC A A NC A A ZZ U V NC NC NC NC NC V DDQ DDQ Rev: 1.01 9/2014 2/23 2014, GSI Technology Specifications cited are subject to change without notice. For latest documentation see

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory
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