X-On Electronics has gained recognition as a prominent supplier of GS8662T37BGD-300 SRAM across the USA, India, Europe, Australia, and various other global locations. GS8662T37BGD-300 SRAM are a product manufactured by GSI Technology. We provide cost-effective solutions for SRAM, ensuring timely deliveries around the world.

GS8662T37BGD-300 GSI Technology

GS8662T37BGD-300 electronic component of GSI Technology
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Part No.GS8662T37BGD-300
Manufacturer: GSI Technology
Category: SRAM
Description: SRAM Chip Sync Single 1.8V 72M-Bit 2M x 36 0.45ns 165-Pin BGA
Datasheet: GS8662T37BGD-300 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
144: USD 81.4024 ea
Line Total: USD 11721.95 
Availability - 0
MOQ: 144  Multiples: 144
Pack Size: 144
Availability Price Quantity
0
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 144
Multiples : 144
144 : USD 81.4024

   
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We are delighted to provide the GS8662T37BGD-300 from our SRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the GS8662T37BGD-300 and other electronic components in the SRAM category and beyond.

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GS8662T07/10/19/37BD-450/400/350/333/300 TM 450 MHz300 MHz 165-Bump BGA 72Mb SigmaDDR-II+ 1.8 V V Commercial Temp DD Burst of 2 SRAM Industrial Temp 1.8 V or 1.5 V I/O SRAMs. The GS8662T07/10/19/37BD SigmaDDR-II+ Features SRAMs are just one element in a family of low power, low 2.0 Clock Latency voltage HSTL I/O SRAMs designed to operate at the speeds Simultaneous Read and Write SigmaDDR Interface needed to implement economical high performance Common I/O bus networking systems. JEDEC-standard pinout and package Double Data Rate interface Byte Write controls sampled at data-in time Clocking and Addressing Schemes Burst of 2 Read and Write On-Die Termination (ODT) on Data (D), Byte Write (BW), The GS8662T07/10/19/37BD SigmaDDR-II+ SRAMs are and Clock (K, K) inputs synchronous devices. They employ two input register clock 1.8 V +100/100 mV core power supply inputs, K and K. K and K are independent single-ended clock 1.5 V or 1.8 V HSTL Interface inputs, not differential inputs to a single differential clock input Pipelined read operation with self-timed Late Write buffer. Fully coherent read and write pipelines ZQ pin for programmable output drive strength Each internal read and write operation in a SigmaDDR-II+ B2 Data Valid pin (QVLD) Support RAM is two times wider than the device I/O bus. An input data IEEE 1149.1 JTAG-compliant Boundary Scan bus de-multiplexer is used to accumulate incoming data before 165-bump, 13 mm x 15 mm, 1 mm bump pitch BGA package it is simultaneously written to the memory array. An output RoHS-compliant 165-bump BGA package available data multiplexer is used to capture the data produced from a single memory array read and then route it to the appropriate output drivers as needed. Therefore, the address field of a SigmaDDR Family Overview SigmaDDR-II+ B2 RAM is always one address pin less than The GS8662T07/10/19/37BD are built in compliance with the the advertised index depth (e.g., the 8M x 8 has an 4M SigmaDDR-II+ SRAM pinout standard for Common I/O addressable index). synchronous SRAMs. They are 75,497,472-bit (72Mb) Parameter Synopsis -450 -400 -350 -333 -300 tKHKH 2.22 ns 2.5 ns 2.86 ns 3.0 ns 3.3 ns tKHQV 0.45 ns 0.45 ns 0.45 ns 0.45 ns 0.45 ns Rev: 1.02c 8/2017 1/29 2011, GSI Technology Specifications cited are subject to change without notice. For latest documentation see GS8662T07/10/19/37BD-450/400/350/333/300 8M x 8 SigmaDDR-II+ SRAMTop View 1 2 3 4 5 6 7 8 9 10 11 NC/SA A CQ SA SA R/W NW1 K LD SA SA CQ (144Mb) NC B NC NC NC SA K NW0 SA NC NC DQ3 (288Mb) C NC NC NC V SA SA SA V NC NC NC SS SS D NC NC NC V V V V V NC NC NC SS SS SS SS SS E NC NC DQ4 V V V V V NC NC DQ2 DDQ SS SS SS DDQ F NC NC NC V V V V V NC NC NC DDQ DD SS DD DDQ G NC NC DQ5 V V V V V NC NC NC DDQ DD SS DD DDQ H Doff V V V V V V V V V ZQ REF DDQ DDQ DD SS DD DDQ DDQ REF J NC NC NC V V V V V NC DQ1 NC DDQ DD SS DD DDQ K NC NC NC V V V V V NC NC NC DDQ DD SS DD DDQ L NC DQ6 NC V V V V V NC NC DQ0 DDQ SS SS SS DDQ M NC NC NC V V V V V NC NC NC SS SS SS SS SS N NC NC NC V SA SA SA V NC NC NC SS SS P NC NC DQ7 SA SA QVLD SA SA NC NC NC R TDO TCK SA SA SA ODT SA SA SA TMS TDI 11 x 15 Bump BGA13 x 15 mm Body1 mm Bump Pitch Notes: 1. NW0 controls writes to DQ0:DQ3 NW1 controls writes to DQ4:DQ7. 2. Pins A7 and B5 are the expansion addresses. Rev: 1.02c 8/2017 2/29 2011, GSI Technology Specifications cited are subject to change without notice. For latest documentation see

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory
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