GS8673ED18/36BK-675/625/550/500 675 MHz500 MHz 260-Ball BGA 72Mb SigmaQuad-IIIe 1.35V V Commercial Temp DD Burst of 4 ECCRAM Industrial Temp 1.2V to 1.5V V DDQ Features Clocking and Addressing Schemes On-Chip ECC with virtually zero SER The GS8673ED18/36BK SigmaQuad-IIIe ECCRAMs are Configurable Read Latency (3.0 or 2.0 cycles) synchronous devices. They employ dual, single-ended master Simultaneous Read and Write SigmaQuad-IIIe Interface clocks, CK and CK. These clocks are single-ended clock Separate I/O Bus inputs, not differential inputs to a single differential clock input Double Data Rate interface buffer. CK and CK are used to control the address and control Burst of 4 Read and Write input registers, as well as all output timing. Pipelined read operation Fully coherent Read and Write pipelines The KD and KD clocks are dual mesochronous (with respect to 1.35V nominal V CK and CK) input clocks that are used to control the data input DD registers. Consequently, data input setup and hold windows 1.2V JESD8-16A BIC-3 Compliant Interface can be optimized independently of address and control input 1.5V HSTL Interface setup and hold windows. ZQ pin for programmable output drive impedance ZT pin for programmable input termination impedance Each internal read and write operation in a SigmaQuad-IIIe B4 Configurable Input Termination ECCRAM is four times wider than the device I/O bus. An IEEE 1149.1 JTAG-compliant Boundary Scan input data bus de-multiplexer is used to accumulate incoming 260-ball, 14 mm x 22 mm, 1 mm ball pitch BGA package data before it is simultaneously written to the memory array. K: 5/6 RoHS-compliant package An output data multiplexer is used to capture the data produced GK: 6/6 RoHS-compliant package from a single memory array read and then route it to the appropriate output drivers as needed. Therefore, the address SigmaQuad-IIIe Family Overview field of a SigmaQuad-IIIe B4 ECCRAM is always two address SigmaQuad-IIIe ECCRAMs are the Separate I/O half of the pins less than the advertised index depth (e.g. the 4M x 18 has SigmaQuad-IIIe/SigmaDDR-IIIe family of high performance 1M addressable index). ECCRAMs. Although very similar to GSI s second generation of networking SRAMs (the SigmaQuad-II/SigmaDDR-II On-Chip Error Correction Code family), these third generation devices offer several new GSI s ECCRAMs implement an ECC algorithm that detects features that help enable significantly higher performance. and corrects all single-bit memory errors, including those induced by Soft Error Rate (SER) events such as cosmic rays, alpha particles, etc. The resulting SER of these devices is anticipated to be <0.002 FITs/Mb a 5-order-of-magnitude improvement over comparable SRAMs with no On-Chip ECC, which typically have an SER of 200 FITs/Mb or more. SER quoted above is based on reading taken at sea level. Parameter Synopsis V Speed Bin Operating Frequency Data Rate (per pin) Read Latency DD -675 675 / 450 MHz 1350 / 900 Mbps 3.0 / 2.0 1.3V to 1.4V -625 625 / 400 MHz 1250 / 800 Mbps 3.0 / 2.0 1.3V to 1.4V -550 550 / 375 MHz 1100 / 750 Mbps 3.0 / 2.0 1.25V to 1.4V -500 500 / 333 MHz 1000 / 666 Mbps 3.0 / 2.0 1.25V to 1.4V Note: Please contact GSI for availability of 714 MHz devices. Rev: 1.07 12/2017 1/31 2011, GSI Technology Specifications cited are subject to change without notice. For latest documentation see GS8673ED18/36BK-675/625/550/500 4M x 18 (Top View) 1 2 3 4 5 6 7 8 9 10 11 12 13 MCH V V V V V V V V MCL MCL ZQ PZT1 A DD DDQ DD DDQ DDQ DD DDQ DD (CFG) MCH NC MCH V NU V NU MVQ PZT0 D0 V Q0 V B SS O SS I SS SS (B4M) (RSVD) (SIOM) V V V V V V NU V NU Q17 D17 SA SA C DDQ DDQ SS DD SS DDQ I DDQ O NC NC V NU V NU SA V V D1 V Q1 V D SS O SS I DDQ DDQ SS SS (288 Mb) (144 Mb) Q16 V D16 V V SA V SA V V NU V NU E DDQ DD SS SS SS DD I DDQ O V NU V NU V V V V V SA SA D2 Q2 F SS O SS I DD DDQ DD SS SS Q15 NU D15 NU V SA MZT1 SA V D3 NU Q3 NU G O I SS SS I O V V V V V NU V NU Q14 D14 SA W SA H DDQ DDQ DDQ DDQ DDQ I DDQ O V NU V NU V SA V SA V D4 V Q4 V J SS O SS I SS SS SS SS SS CQ1 V V V KD1 V CK V KD0 V V V CQ0 K DDQ REF DD DD DD DD REF DDQ V V V V V V CQ1 QVLD1 KD1 CK KD0 QVLD0 CQ0 L SS ss DDQ DDQ SS SS V Q13 V D13 V SA V SA V NU V NU V M SS SS SS SS SS I SS O SS NU V NU V V V V V DLL R MCH D5 Q5 N O DDQ I DDQ DDQ DDQ DDQ DDQ NU Q12 NU D12 V SA MZT0 SA V NU D6 NU Q6 P O I SS SS I O V Q11 V D11 MCH V V V RST NU V NU V R SS SS DD DDQ DD I SS O SS NU V NU V V V V V V SA SA D7 Q7 T O DDQ I DD SS SS SS DD DDQ V Q10 V D10 NU V ADZT1 V NU NU V NU V U SS SS I DDQ DDQ I I SS O SS SA NU I NU V NU V V V V V V D8 Q8 V O DDQ I DDQ SS DD SS DDQ DDQ (x18) (B2) NC V Q9 V D9 TCK RLM0 MCL TMS NU V NU V W SS SS I SS O SS (RSVD) V V V V TDO ZT RLM1 MCL TDI V V V V Y DD DDQ DD DDQ DDQ DD DDQ DD Notes: 1. Pins 5A and 7A are reserved for future use. They must be tied Low in this device. 2. Pins 5R and 9N are reserved for future use. They must be tied High in this device. 3. Pin 6A is defined as mode pin CFG in the pinout standard. It must be tied High in this device to select x18 configuration. 4. Pin 8B is defined as mode pin SIOM in the pinout standard. It must be tied High in this device to select Separate I/O configuration. 5. Pin 6B is defined as mode pin B4M in the pinout standard. It must be tied High in this device to select Burst-of-4 configuration. 6. Pin 6V is defined as address pin SA for x18 devices. It is used in this device. 7. Pin 8V is defined as address pin SA for B2 devices. It is unused in this device, and must be left unconnected or driven Low. 8. Pin 9D is reserved as address pin SA for 144 Mb devices. It is a true no connect in this device. 9. Pin 7D is reserved as address pin SA for 288 Mb devices. It is a true no connect in this device. 10. Pins 5U and 9U are unused in this device. They must be left unconnected or driven Low. 11. Pins 8W and 8Y are reserved for internal use only. They must be tied Low. 12. Pins 7B and 7W are reserved for future use. They are true no connects in this device. Rev: 1.07 12/2017 2/31 2011, GSI Technology Specifications cited are subject to change without notice. For latest documentation see