X-On Electronics has gained recognition as a prominent supplier of HT75NF75ATZ MOSFETs across the USA, India, Europe, Australia, and various other global locations. HT75NF75ATZ MOSFETs are a product manufactured by HTCSEMI. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

HT75NF75ATZ HTCSEMI

HT75NF75ATZ electronic component of HTCSEMI
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Part No.HT75NF75ATZ
Manufacturer: HTCSEMI
Category: MOSFETs
Description: 80V 80A 0.008Ω@10V,37.5A 173W 4V@250uA 210pF@25V N Channel 2600pF@25V 80nC@10V +150℃@(Tj) TO-220AB/3 MOSFETs ROHS
Datasheet: HT75NF75ATZ Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.6094 ea
Line Total: USD 0.61 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 05 Dec to Tue. 10 Dec
MOQ : 1
Multiples : 1
1 : USD 0.6094
10 : USD 0.5006
50 : USD 0.4463
100 : USD 0.3938
500 : USD 0.3414
1000 : USD 0.3244

   
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We are delighted to provide the HT75NF75ATZ from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the HT75NF75ATZ and other electronic components in the MOSFETs category and beyond.

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The electronic part HT75NF75ATZ is an N-channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET) manufactured by HTCSEMI and is compliant with Restriction of Hazardous Substances (RoHS) regulations. It has an operating voltage range of 80 Volts and a maximum continuous drain current of 80Amps with an on-state resistance of 0.008 Ohms @10 Volts. The power dissipation rating of this component is 173 Watts and its gate threshold voltage is 4 Volts @250 Microamps. It also has a capacitance of 210 Picofarads @ 25 Volts for the drain-source junction and a gate-source capacitance of 2600 Picofarads @25 Volts. The steady-state output capacitance of the device is 80 Nanocoulombs @10 Volts and its maximum operating junction temperature is +150 Centigrade. The package of the part is TO-220AB/3.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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