X-On Electronics has gained recognition as a prominent supplier of HSBA060N10 MOSFETs across the USA, India, Europe, Australia, and various other global locations. HSBA060N10 MOSFETs are a product manufactured by HUASHUO. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

HSBA060N10 HUASHUO

Name: HSBA060N10
Brand: HUASHUO
SKU: HSBA060N10_HUASHUO
Availability: OutOfStock
Rating: 5 (11 reviews)

HSBA060N10 electronic component of HUASHUO

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See Product Specifications

Part No.	HSBA060N10
Manufacturer:	HUASHUO
Category:	MOSFETs
Description:	MOSFET N Channel 100V 86A 3.0V @ 250uA 6mΩ @ 20A,10V PRPAK5x6 RoHS
Datasheet:	HSBA060N10 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 0.6107 ea
Line Total: USD 0.61

Availability - 0

MOQ: 1 Multiples: 1
Pack Size: 1

HSBA060N10 More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Fri. 03 Jan to Wed. 08 Jan MOQ : 1 Multiples : 1	1 : USD 0.6107 10 : USD 0.5954 30 : USD 0.5859 100 : USD 0.5763

Specifications

Manufacturer HUASHUO HUASHUO
Product Category MOSFETs MOSFETs
Category MOSFET MOSFET
Rohs y y
Package PRPAK5X6 PRPAK5X6
Brand Category Huashuo Huashuo
Fet Type n channel n channel
Drain To Source Voltagevdss 100 V 100 V
Continuous Drain Current Id @ 25°C 86 A 86 A
Vgsth Max @ Id 3.0 V @ 250ua 3.0 V @ 250ua
Rds On Max @ Id Vgs 6m? @ 20a,10v 6m? @ 20a,10v
Power Dissipation-Max Ta 25°C 89 W 89 W
Drain Source Voltage Vdss 100 V 100 V
Continuous Drain Current Id 86 A 86 A
Power Dissipation Pd 89 W 89 W
Drain Source On Resistance Rdson@Vgs Id 6 mOhms @10V , 20A 6 mOhms @10V , 20A
Gate Threshold Voltage Vgsth@Id 3 V @250uA 3 V @250uA
Type N Channel N Channel

We are delighted to provide the HSBA060N10 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the HSBA060N10 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The HSBA060N10 MOSFET N Channel 100V 86A 3.0V @ 250uA 6mO @ 20A,10V PRPAK5x6 RoHS manufactured by HUASHUO is an electronic component which is designed to be used in applications where a high power switch is required. It is a robust and long lasting N-Channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) rated for a maximum voltage of 100 volts, a maximum continuous current of 86 amps, and a breakdown voltage of 3.0 volts at 250 microamps. It is ideal for applications which require high switching speed and low gate drive power. It features a low on-resistance of 6 milliohms (at 20 amps and 10 volts), and is RoHS compliant. The HSBA060N10 comes in a PRPAK5x6 package and is manufactured by HUASHUO.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

HUASHUO may also be referenced as

Huashuo Semiconductor

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