.The HY1001D is a N-Channel MOSFET manufactured by HuaYi with a lead-free, RoHS compliant design. It is housed in a TO-252-2 package and has the following specifications: 70V drain source voltage, 70A drain current (at 10V), 7.4mO on-state resistance (at 10V), 40A pulsed drain current (75W, 3V at 250uA), 220pF junction capacitance (at 25V), 4200pF gate-drain capacitance (at 25V), 82nC gate-sourcecapacitance (at 10V), and a junction temperature range of -55? to +175?.