X-On Electronics has gained recognition as a prominent supplier of HY1906D MOSFETs across the USA, India, Europe, Australia, and various other global locations. HY1906D MOSFETs are a product manufactured by HuaYi. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

HY1906D HuaYi

HY1906D electronic component of HuaYi
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Part No.HY1906D
Manufacturer: HuaYi
Category: MOSFETs
Description: MOSFET N Trench 68V 70A (Tc) 4V @ 250uA 8.5 mΩ @ 35A,10V TO-252-2 RoHS
Datasheet: HY1906D Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.792 ea
Line Total: USD 0.79 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
   
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the HY1906D from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the HY1906D and other electronic components in the MOSFETs category and beyond.

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The HY1906D is a MOSFET N Trench transistor manufactured by HuaYi. It is designed to handle up to 68V at 70A (Tc). It has a maximum gate threshold voltage of 4V at 250uA, an on-state resistance of 8.5 mO at 35A, and a maximum drain source voltage of 10V. The transistor is packaged in a TO-252-2 RoHS compliant package.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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