SemiconductorThe HY3306B is a N-channel MOSFET manufactured by HuaYi Semiconductor. It has a Trench 60V 130A (Tc) 4V @ 250uA 6.8 mΩ @ 65A,10V TO-263-2 RoHS package type. It has a drain-source voltage rating of 60V and a drain current rating of 130A. It also has a 4V @ 250uA threshold gate voltage, an on-resistance rating of 6.8 mΩ @ 65A,10V, and is compliant with RoHS standards. This device is suitable for use in various applications including power management, motor control, and other commercial, industrial, and automotive applications.