X-On Electronics has gained recognition as a prominent supplier of HY3312B MOSFETs across the USA, India, Europe, Australia, and various other global locations. HY3312B MOSFETs are a product manufactured by HuaYi. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

HY3312B HuaYi

Name: HY3312B
Brand: HuaYi
SKU: HY3312B_HuaYi
Availability: InStock
Rating: 5 (11 reviews)

Images are for reference only
See Product Specifications

Part No.	HY3312B
Manufacturer:	HuaYi
Category:	MOSFETs
Description:	MOSFET N Trench 125V 130A (Tc) 4V @ 250uA 9 mÎ© @ 65A,10V TO-263-2L RoHS
Datasheet:	HY3312B Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 1.2171 ea
Line Total: USD 1.22

Availability - 24
Ship by Fri. 14 Mar to Wed. 19 Mar

MOQ: 1 Multiples: 1
Pack Size: 1

HY3312B More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

24

Ship by Fri. 14 Mar to Wed. 19 Mar

MOQ : 1
Multiples : 1

1 : USD 1.2171
10 : USD 0.9352
30 : USD 0.6797
100 : USD 0.504

Specifications

Manufacturer

HuaYi HuaYi

Product Category

MOSFETs MOSFETs

Category

MOSFET MOSFET

Rohs

y y

Package

TO - 263 - 2L TO - 263 - 2L

Brand Category

Huayi Huayi

Fet Type

n trench n trench

Drain To Source Voltagevdss

125 V 125 V

Continuous Drain Current Id @ 25°C

130 A (t C) 130 A (t C)

Vgsth Max @ Id

4v @ 250ua 4v @ 250ua

Rds On Max @ Id Vgs

9 m @ 65a,10v 9 m @ 65a,10v

Power Dissipation-Max Ta

278 W 278 W

Drain Source Voltage Vdss

125 V 125 V

Continuous Drain Current Id

130 A 130 A

Drain Source On Resistance Rdson@Vgs Id

9 mOhms @10V , 65A 9 mOhms @10V , 65A

Power Dissipation Pd

278 W 278 W

Gate Threshold Voltage Vgsth@Id

4 V @250uA 4 V @250uA

Type

N Channel N Channel

Notes:- Show Stocked Products With Similar Attributes.

HY3312B Alternative Parts

We are delighted to provide the HY3312B from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the HY3312B and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The HY3312B is a MOSFET 125V 130A (Tc) 4V @ 250uA 9 mÎ© @ 65A,10V TO-263-2L RoHS manufactured by HuaYi. It is a Field-Effect Transistor (FET) designed to shutoff or boost electrical signals in a circuit. This particular device has a maximum voltage rating of 125 V, a maximum current rating of 130 A, a gate threshold voltage of 4V @ 250uA and an on-resistance of 9 mÎ© @ 65A. The device also has a 10V breakdown voltage rating and is offered in a TO-263-2L form factor and RoHS compliant packaging.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

HUAYI may also be referenced as

HuaYi Microelectronics

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Availability	Price	Buy Price	Quantity
24 Ship by Fri. 14 Mar to Wed. 19 Mar MOQ : 1 Multiples : 1	1 : USD 1.2171 10 : USD 0.9352 30 : USD 0.6797 100 : USD 0.504

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