X-On Electronics has gained recognition as a prominent supplier of HY4004A MOSFET across the USA, India, Europe, Australia, and various other global locations. HY4004A MOSFET are a product manufactured by HuaYi. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

HY4004A HuaYi

HY4004A electronic component of HuaYi
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See Product Specifications
Part No.HY4004A
Manufacturer: HuaYi
Category: MOSFET
Description: 40V 208A 268W 2.4mΩ@10V,104A 3V@250uA 596pF@25V N Channel 5700pF@25V 158nC@10V -55℃~+175℃@(Tj) TO-3P MOSFETs ROHS
Datasheet: HY4004A Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.8972 ea
Line Total: USD 0.9

Availability - 237
Ship by Thu. 08 Aug to Tue. 13 Aug
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
237
Ship by Thu. 08 Aug to Tue. 13 Aug
MOQ : 1
Multiples : 1
1 : USD 0.8949
10 : USD 0.8122
30 : USD 0.7656
100 : USD 0.7148
660 : USD 0.6908
990 : USD 0.6815

   
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We are delighted to provide the HY4004A from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the HY4004A and other electronic components in the MOSFET category and beyond.

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ElectronicsThe HY4004A MOSFET produced by HuaYi Electronics is a power transistor featuring an N-channel and TO-3P package. It boasts a maximum power rating of 268W, a gate-source threshold voltage of 596pF at 25V, and a maximum drain-source on-state resistance of 2.4mO at 10V. The transistor is rated to support gate-sources voltages of up to 40V and drain-source max current ratings of 208A at 10V and 104A at 3V, with a maximum drain peak current of 250uA. It has an input capacitance of 5700pF at 25V and a total gate charge of 158nC at 10V. The temperature range is -55? to 175? at Tj. This device meets the ROHS standards.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
HuaYi Microelectronics

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