The HYG023N04LS1B is a MOSFET, manufactured by HuaYi. It is a surface mount N-channel depletion MOSFET with an active area of 23 x 23 mm. The package is TO-263-2L, ROHS compliant and is manufactured using Lead Free technology. It is rated for 26V maximum drain-source breakdown voltage, 0.0035 Ohm maximum drain-source on-state resistance, and -55 to 175°C operating temperature. It is widely used in power management applications such as DC-DC Converters, DC-AC Inverters, and Motor Drives for automotive, industrial, medical and telecommunication applications.