X-On Electronics has gained recognition as a prominent supplier of HYG023N04LS1D MOSFETs across the USA, India, Europe, Australia, and various other global locations. HYG023N04LS1D MOSFETs are a product manufactured by HuaYi. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

HYG023N04LS1D HuaYi

HYG023N04LS1D electronic component of HuaYi
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See Product Specifications
Part No. HYG023N04LS1D
Manufacturer: HuaYi
Category: MOSFETs
Description: 40V 120A 2mΩ@10V,40A 75W 1.9V@250uA 45pF@25V N Channel 4032pF@25V 27.4nC@10V -55℃~+175℃@(Tj) TO-252-2L MOSFETs ROHS
Datasheet: HYG023N04LS1D Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.3264 ea
Line Total: USD 0.33 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 09 Jan to Tue. 14 Jan
MOQ : 1
Multiples : 1
1 : USD 0.3264
10 : USD 0.3187
30 : USD 0.3149
100 : USD 0.3093

   
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We are delighted to provide the HYG023N04LS1D from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the HYG023N04LS1D and other electronic components in the MOSFETs category and beyond.

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The HYG023N04LS1D is a RoHS-compliant N-channel MOSFET manufactured by HuaYi. It has a drain-source voltage of 40V, an operating current of 120A, an effective drain-source on-state resistance of 2mO at 10V, a current limit of 40A at 75W, a gatethreshold voltage of 1.9V at 250µA, a gate-source capacitance of 45pF at 25V, a source-drain capacitance of 4032pF at 25V, a gate-drain charge of 27.4nC at 10V, and an operating temperature range of -55? to +175? (Tj). The package type is a TO-252–2L.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
HuaYi Microelectronics
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