The HYG023N04LS1D is a RoHS-compliant N-channel MOSFET manufactured by HuaYi. It has a drain-source voltage of 40V, an operating current of 120A, an effective drain-source on-state resistance of 2mO at 10V, a current limit of 40A at 75W, a gatethreshold voltage of 1.9V at 250µA, a gate-source capacitance of 45pF at 25V, a source-drain capacitance of 4032pF at 25V, a gate-drain charge of 27.4nC at 10V, and an operating temperature range of -55? to +175? (Tj). The package type is a TO-252–2L.