X-On Electronics has gained recognition as a prominent supplier of HYG024N03LR1D MOSFETs across the USA, India, Europe, Australia, and various other global locations. HYG024N03LR1D MOSFETs are a product manufactured by HuaYi. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

HYG024N03LR1D HuaYi

HYG024N03LR1D electronic component of HuaYi
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See Product Specifications
Part No.HYG024N03LR1D
Manufacturer: HuaYi
Category: MOSFETs
Description: TO-252 MOSFETs ROHS
Datasheet: HYG024N03LR1D Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.4906 ea
Line Total: USD 0.49 
Availability - 27
Ship by Wed. 08 Jan to Mon. 13 Jan
MOQ: 1  Multiples: 1
Pack Size: 1

 HYG024N03LR1D More Buying Options & Price Grid(s)

Availability Price Quantity
27
Ship by Wed. 08 Jan to Mon. 13 Jan
MOQ : 1
Multiples : 1
1 : USD 0.4906
10 : USD 0.397
30 : USD 0.3588
100 : USD 0.3093
500 : USD 0.2863
1000 : USD 0.273

Specifications

   
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We are delighted to provide the HYG024N03LR1D from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the HYG024N03LR1D and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The HYG024N03LR1D is a MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) with an ROHS certification, which is made to operate at high temperatures. It is housed in an insulated TO-252 package and is manufactured by the Chinese company HuaYi. The HYG024N03LR1D is a single N-channel enhancement MOSFET, meaning it is designed to control a single potential from source to drain. The device has an effective maximum drain current of 30A and is capable of operation at a low gate-source voltage of 2V. The HYG024N03LR1D also features a total power dissipation at 25 ° C of up to 700mW and a minimum drain-source breakdown voltage of 24V. The device is designed to be used as a switching device in large load applications such as power supplies, motor control, and power conversion systems.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

HUAYI may also be referenced as

HuaYi Microelectronics

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