X-On Electronics has gained recognition as a prominent supplier of HYG025N06LS1D MOSFET across the USA, India, Europe, Australia, and various other global locations. HYG025N06LS1D MOSFET are a product manufactured by HuaYi. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

HYG025N06LS1D HuaYi

HYG025N06LS1D electronic component of HuaYi
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See Product Specifications
Part No.HYG025N06LS1D
Manufacturer: HuaYi
Category: MOSFET
Description: 60V 160A 2.6mΩ@10V,40A 125W 2.1V@250uA 10.2pF@25V N Channel 3915pF@25V 58.3nC@10V +175℃@(Tj) TO-252-2L MOSFETs ROHS
Datasheet: HYG025N06LS1D Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.7352 ea
Line Total: USD 0.74

Availability - 3250
Ship by Thu. 08 Aug to Tue. 13 Aug
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
4586
Ship by Thu. 08 Aug to Tue. 13 Aug
MOQ : 1
Multiples : 1
1 : USD 0.6819
10 : USD 0.5631
30 : USD 0.5027
100 : USD 0.4441
500 : USD 0.4092
1000 : USD 0.3916

   
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We are delighted to provide the HYG025N06LS1D from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the HYG025N06LS1D and other electronic components in the MOSFET category and beyond.

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HYG025N06LS1D is a N-channel MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) manufactured by HuaYi. It features a maximum drain voltage of 60V, a maximum drain current of 160A at 10V, a total gate charge of 3915pF at 25V, a total gate-source capacitance of 58.3nC at 10V, and a total gate-drain capacitance of 10.2pF at 25V. It has a very low on-state resistance of 2.6m? at 10V and a continuous drain current of 40A at 125W with a gate-source voltage of 2.1V and a gate current of 250µA. Finally, the operation temperature range is -175? (Tj). The HYG025N06LS1D is also RoHS compliant.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
HuaYi Microelectronics

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