X-On Electronics has gained recognition as a prominent supplier of HYG045N03LA1C2 MOSFETs across the USA, India, Europe, Australia, and various other global locations. HYG045N03LA1C2 MOSFETs are a product manufactured by HuaYi. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

HYG045N03LA1C2 HuaYi

Name: HYG045N03LA1C2
Brand: HuaYi
SKU: HYG045N03LA1C2_HuaYi
Availability: InStock
Rating: 5 (11 reviews)

HYG045N03LA1C2 electronic component of HuaYi

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See Product Specifications

Part No.	HYG045N03LA1C2
Manufacturer:	HuaYi
Category:	MOSFETs
Description:	30V 78A 3.6mΩ@10V,20A 52W N Channel DFN-8(5.2x5.9) MOSFETs ROHS
Datasheet:	HYG045N03LA1C2 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

5: USD 0.1898 ea
Line Total: USD 0.95

Availability - 2050
Ship by Tue. 07 Jan to Fri. 10 Jan

MOQ: 5 Multiples: 5
Pack Size: 5

HYG045N03LA1C2 More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

2050

Ship by Tue. 07 Jan to Fri. 10 Jan

MOQ : 5
Multiples : 5

5 : USD 0.1898
50 : USD 0.1535
150 : USD 0.138
500 : USD 0.1186
2500 : USD 0.0969
5000 : USD 0.0917

Specifications

Manufacturer
HuaYi HuaYi

Product Category
MOSFETs MOSFETs

Package
DFN - 8 (5.2X5.9) DFN - 8 (5.2X5.9)

Rohs
y y

Drain Source Voltage Vdss
30 V 30 V

Continuous Drain Current Id
78 A 78 A

Drain Source On Resistance Rdson@Vgs Id
3.6 mOhms @10V , 20A 3.6 mOhms @10V , 20A

Power Dissipation Pd
52 W 52 W

Gate Threshold Voltage Vgsth@Id
1.6 V @250uA 1.6 V @250uA

Reverse Transfer Capacitance Crss@Vds
223 pF @25V 223 pF @25V

Type
N Channel N Channel

Input Capacitance Ciss@Vds
2.13 nF @25V 2.13 nF @25V

Total Gate Charge Qg@Vgs
24.1 nC @4.5V 24.1 nC @4.5V

Operating Temperature
- 55 C ~ + 175 C @ (Tj) - 55 C ~ + 175 C @ (Tj)

Notes:- Show Stocked Products With Similar Attributes.

HYG045N03LA1C2 Alternative Parts

We are delighted to provide the HYG045N03LA1C2 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the HYG045N03LA1C2 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The HYG045N03LA1C2 is a N Channel DFN-8 (5.2x5.9) MOSFET manufactured by HuaYi. It has a 30V rating and a 78A maximum gate drive current. Its power dissipation is 52W and its on-resistance is 3.6mO@10V,20A. This part is compliant with the RoHS standards.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

HUAYI may also be referenced as

HuaYi Microelectronics

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Availability	Price	Buy Price	Quantity
2050 Ship by Tue. 07 Jan to Fri. 10 Jan MOQ : 5 Multiples : 5	5 : USD 0.1898 50 : USD 0.1535 150 : USD 0.138 500 : USD 0.1186 2500 : USD 0.0969 5000 : USD 0.0917

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