X-On Electronics has gained recognition as a prominent supplier of HYG053N10NS1B MOSFETs across the USA, India, Europe, Australia, and various other global locations. HYG053N10NS1B MOSFETs are a product manufactured by HuaYi. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

HYG053N10NS1B HuaYi

HYG053N10NS1B electronic component of HuaYi
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Part No.HYG053N10NS1B
Manufacturer: HuaYi
Category: MOSFETs
Description: 100V 120A 187.5W 4.8mΩ@10V,50A 3V@250uA 76pF@25V N Channel 4036pF@25V 70nC@10V -55℃~+175℃@(Tj) TO-263-2L MOSFETs ROHS
Datasheet: HYG053N10NS1B Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.5049 ea
Line Total: USD 0.5 
Availability - 622
Ship by Tue. 07 Jan to Fri. 10 Jan
MOQ: 1  Multiples: 1
Pack Size: 1

 HYG053N10NS1B More Buying Options & Price Grid(s)

Availability Price Quantity
622
Ship by Tue. 07 Jan to Fri. 10 Jan
MOQ : 1
Multiples : 1
1 : USD 0.5049
10 : USD 0.4054
30 : USD 0.3642
100 : USD 0.3116
500 : USD 0.276
800 : USD 0.2628

Specifications

   
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We are delighted to provide the HYG053N10NS1B from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the HYG053N10NS1B and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The HYG053N10NS1B is an N-Channel MOSFET manufactured by HuaYi that has a voltage rating of 100V, a current rating of 120A, a maximum power dissipation of 187.5W, and an on-state resistance of 4.8mO when rated at 10V/50A. It has a gate-to-source capacitance of 4036pF when rated at 25V and an output capacitance of 76pF also rated at 25V. Its input capacitance is 70nC rated at 10V, and it is RoHS compliant and operates within a junction temperature range of -55? to +175?. The package type of this transistor is TO-263-2L.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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HuaYi Microelectronics

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