X-On Electronics has gained recognition as a prominent supplier of HYG053N10NS1P MOSFETs across the USA, India, Europe, Australia, and various other global locations. HYG053N10NS1P MOSFETs are a product manufactured by HuaYi. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

HYG053N10NS1P HuaYi

HYG053N10NS1P electronic component of HuaYi
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See Product Specifications
Part No.HYG053N10NS1P
Manufacturer: HuaYi
Category: MOSFETs
Description: TO-220FB-3L MOSFETs ROHS
Datasheet: HYG053N10NS1P Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.5408 ea
Line Total: USD 0.54 
Availability - 308
Ship by Wed. 08 Jan to Mon. 13 Jan
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
308
Ship by Wed. 08 Jan to Mon. 13 Jan
MOQ : 1
Multiples : 1
1 : USD 0.5408
10 : USD 0.4362
50 : USD 0.3894
100 : USD 0.3332
500 : USD 0.3089
1000 : USD 0.2939

   
Manufacturer
Product Category
Category
Datasheet
Rohs
Drain Source Voltage Vdss
Continuous Drain Current Id
Drain Source On Resistance Rdson@Vgs Id
Power Dissipation Pd
Gate Threshold Voltage Vgsth@Id
Reverse Transfer Capacitance Crss@Vds
Type
Input Capacitance Ciss@Vds
Total Gate Charge Qg@Vgs
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We are delighted to provide the HYG053N10NS1P from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the HYG053N10NS1P and other electronic components in the MOSFETs category and beyond.

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The HYG053N10NS1P is a three-terminal MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) from HuaYi that is constructed with a TO-220FB-3L package. It is designed to protect against overvoltage, overcurrent, and electrostatic discharges, and features reverse-body breakdown protection. This MOSFET is compliant with RoHS requirements and has a low thermal resistance junction-tab (R?JA) and a typical on-resistance of 101mO. It has an isolation voltage of 1.5kV and operates in a temperature range between -55°C to 150°C.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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