X-On Electronics has gained recognition as a prominent supplier of HYG060N08NS1B MOSFETs across the USA, India, Europe, Australia, and various other global locations. HYG060N08NS1B MOSFETs are a product manufactured by HuaYi. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

HYG060N08NS1B HuaYi

HYG060N08NS1B electronic component of HuaYi
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Part No.HYG060N08NS1B
Manufacturer: HuaYi
Category: MOSFETs
Description: 80V 105A 5.5mΩ@10V,40A 125W 3V@250uA 60pF@25V N Channel 2950pF@25V 48nC@10V -55℃~+175℃@(Tj) TO-263-3L MOSFETs ROHS
Datasheet: HYG060N08NS1B Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.4933 ea
Line Total: USD 0.49 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 09 Jan to Tue. 14 Jan
MOQ : 1
Multiples : 1
1 : USD 0.4933
10 : USD 0.3977
30 : USD 0.3558
100 : USD 0.304
500 : USD 0.2811
800 : USD 0.2677

   
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We are delighted to provide the HYG060N08NS1B from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the HYG060N08NS1B and other electronic components in the MOSFETs category and beyond.

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The HYG060N08NS1B is an N Channel MOSFET manufactured by HuaYi, which has a maximum drain-source voltage of 80V, a drain current of 105A, and a gate threshold voltage of 5.5mO@10V. It also has a maximum continuous drain current of 40A with a power dissipation of 125W. The parasitic capacitance of the device is 60pF@25V while the input capacitance is 2950pF@25V. The transfer admittance of the device is 48nC@10V and it is operational in a temperature range of -55?~+175?@(Tj). It is a TO-263-3L package and is RoHS compliant.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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