X-On Electronics has gained recognition as a prominent supplier of HYG068N08NR1P MOSFETs across the USA, India, Europe, Australia, and various other global locations. HYG068N08NR1P MOSFETs are a product manufactured by HuaYi. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

HYG068N08NR1P HuaYi

HYG068N08NR1P electronic component of HuaYi
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Part No.HYG068N08NR1P
Manufacturer: HuaYi
Category: MOSFETs
Description: 80V 160A 6mΩ@10V,60A 268W 3V@250uA 231pF@25V N Channel 3.722nF@25V 84nC@10V -55℃~+175℃@(Tj) TO-220FB-3L MOSFETs ROHS
Datasheet: HYG068N08NR1P Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.9274 ea
Line Total: USD 0.93 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Wed. 08 Jan to Mon. 13 Jan
MOQ : 1
Multiples : 1
1 : USD 0.9274
10 : USD 0.771
30 : USD 0.6909
100 : USD 0.6126
500 : USD 0.5669
1000 : USD 0.542

   
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We are delighted to provide the HYG068N08NR1P from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the HYG068N08NR1P and other electronic components in the MOSFETs category and beyond.

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The HYG068N08NR1P is a n-channel MOSFET manufactured by HuaYi. It has a voltage rating of 80V and a continuous drain current of 160A. It also features a low on-resistance of 6mO at 10V and a power dissipation of 268W at 60A. Additionally, the device has a 3V drain source breakdown voltage of 250uA, a gate capacitance of 231pF at 25V, a total gate charge of 3.722nF at 25V, and an internal gate to source capacitance of 84nC at 10V. The operating temperature range is -55?~+175? and it is ROHS compliant. The package of this device is TO-220FB-3L.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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