X-On Electronics has gained recognition as a prominent supplier of HYG072N08NR1P MOSFETs across the USA, India, Europe, Australia, and various other global locations. HYG072N08NR1P MOSFETs are a product manufactured by HuaYi. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

HYG072N08NR1P HuaYi

HYG072N08NR1P electronic component of HuaYi
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Part No.HYG072N08NR1P
Manufacturer: HuaYi
Category: MOSFETs
Description: 80V 100A 6.8mΩ@10V,40A 188W 3V@250uA 164pF@25V N Channel 2.77nF@25V 68nC@10V -55℃~+175℃@(Tj) TO-220FB-3L MOSFETs ROHS
Datasheet: HYG072N08NR1P Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.332 ea
Line Total: USD 0.33 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 09 Jan to Tue. 14 Jan
MOQ : 1
Multiples : 1
1 : USD 0.332
10 : USD 0.2754
50 : USD 0.2472
100 : USD 0.219
500 : USD 0.2025
1000 : USD 0.1939

   
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We are delighted to provide the HYG072N08NR1P from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the HYG072N08NR1P and other electronic components in the MOSFETs category and beyond.

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The HYG072N08NR1P is an N Channel MOSFET manufactured by HuaYi. It has a rated voltage of up to 80V and is rated for 100A. The maximum on resistance is 6.8mO at 10V and 40A. The device has a power dissipation up to 188W, a gate-source leakage current of 3V@250uA, a gate-drain capacitance up to 164pF@25V, a gate charge of 2.77nF@25V, and a total gate charge of 68nC@10V. The operating temperature range for this device is -55? to +175? and it is compliant with RoHS standards. This device is available as a TO-220FB-3L device package.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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