X-On Electronics has gained recognition as a prominent supplier of HYG082N03LR1C1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. HYG082N03LR1C1 MOSFETs are a product manufactured by HuaYi. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

HYG082N03LR1C1 HuaYi

HYG082N03LR1C1 electronic component of HuaYi
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See Product Specifications
Part No.HYG082N03LR1C1
Manufacturer: HuaYi
Category: MOSFETs
Description: 30V 32A 7mΩ@10V,10A 21.4W 1.8V@250uA 65pF@25V N Channel 787pF@25V 14.8nC@10V -55℃~+175℃@(Tj) DFN3x3-8L MOSFETs ROHS
Datasheet: HYG082N03LR1C1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.0999 ea
Line Total: USD 0.5 
Availability - 4
Ship by Thu. 09 Jan to Tue. 14 Jan
MOQ: 5  Multiples: 5
Pack Size: 5

 HYG082N03LR1C1 More Buying Options & Price Grid(s)

Availability Price Quantity
4
Ship by Thu. 09 Jan to Tue. 14 Jan
MOQ : 5
Multiples : 5
5 : USD 0.0999
50 : USD 0.0975
150 : USD 0.096
500 : USD 0.0945

Specifications

   
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We are delighted to provide the HYG082N03LR1C1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the HYG082N03LR1C1 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The HYG082N03LR1C1 is an N Channel MOSFET designed and manufactured by HuaYi. It has a maximum drain source voltage of 30V and a maximum drain current of 32A. It has a low output resistance of 7mO at 10V and 10A and a power dissipation of 21.4W. The gate threshold voltage is 1.8V with a maximum gate current of 250uA, and the input capacitance is 65pF at 25V. It has a maximum junction capacitance of 787pF at 25V and a maximum drain-source capacitance of 14.8nC at 10V. The operating temperature range is -55? to +175? and the package of the device is DFN3x3-8L. It is also RoHS compliant.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

HUAYI may also be referenced as

HuaYi Microelectronics

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