X-On Electronics has gained recognition as a prominent supplier of HYG090N06LS1C2 MOSFETs across the USA, India, Europe, Australia, and various other global locations. HYG090N06LS1C2 MOSFETs are a product manufactured by HuaYi. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

HYG090N06LS1C2 HuaYi

HYG090N06LS1C2 electronic component of HuaYi
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See Product Specifications
Part No.HYG090N06LS1C2
Manufacturer: HuaYi
Category: MOSFETs
Description: PDFN5x6-8L MOSFETs ROHS
Datasheet: HYG090N06LS1C2 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.2749 ea
Line Total: USD 1.37 
Availability - 4170
Ship by Tue. 07 Jan to Fri. 10 Jan
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
4170
Ship by Tue. 07 Jan to Fri. 10 Jan
MOQ : 5
Multiples : 5
5 : USD 0.2749
50 : USD 0.2198
150 : USD 0.1962
500 : USD 0.1667
2500 : USD 0.147
5000 : USD 0.1392

   
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We are delighted to provide the HYG090N06LS1C2 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the HYG090N06LS1C2 and other electronic components in the MOSFETs category and beyond.

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The HYG090N06LS1C2 is a RoHS-compliant N-channel MOSFET manufactured by HuaYi. It has a PDFN5x6-8L structure and is designed to provide excellent power handling capability in high-side power switching applications. The device offers low on-state resistance, low input capacitance and fast switching speeds to enable efficient converters in applications such as switching PWM circuits. It is capable of withstanding peak gate voltages up to 20V with a maximum drain-source voltage of 60V. The device can handle up to approximately 8A of continuous current. The packaging for this MOSFET is a TO-220F package, making it suitable for surface mount applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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