X-On Electronics has gained recognition as a prominent supplier of HYG101N10LA1D MOSFETs across the USA, India, Europe, Australia, and various other global locations. HYG101N10LA1D MOSFETs are a product manufactured by HuaYi. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

HYG101N10LA1D HuaYi

HYG101N10LA1D electronic component of HuaYi
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See Product Specifications
Part No.HYG101N10LA1D
Manufacturer: HuaYi
Category: MOSFETs
Description: TO-252-2L MOSFETs ROHS
Datasheet:
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.1215 ea
Line Total: USD 0.12 
Availability - 226
Ship by Wed. 08 Jan to Mon. 13 Jan
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
226
Ship by Wed. 08 Jan to Mon. 13 Jan
MOQ : 1
Multiples : 1
1 : USD 0.1215
10 : USD 0.1068
30 : USD 0.1005
100 : USD 0.0926
500 : USD 0.0891
1000 : USD 0.087

   
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We are delighted to provide the HYG101N10LA1D from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the HYG101N10LA1D and other electronic components in the MOSFETs category and beyond.

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The HYG101N10LA1D is a MOSFET TO-252-2L package that is RoHS compliant. It is manufactured by HuaYi and features a maximum drain source voltage of 1000V, a maximum drain current of 10A, and a maximum total gate charge of 160nC. The device has an antimagnetic temperature range of -55°C to +150°C and features N-channel Mosfet technology. Its maximum power dissipation is 39W. This MOSFET is ideal for various applications like power supplies, motor drives, and automotive applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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