The HYG200N12NS1C2 is an advanced N-channel MOSFET manufactured by HuaYi. It is RoHS compliant and comes in a PDFN-8L package with dimensions of 5x6. It has a rated drain voltage of 120V, drain-source current of 60A, on-state resistance of 14.7mO at 10V, maximum drain current of 30A, power dissipation of 125W, gate-source voltage of 3V with maximum gate-leakage current of 250uA, gate-source capacitance of 2310pF at 25V, gate-drain capacitance of 16.7pF at 25V, gate charge of 33.4nC at 10V, and an operating junction temperature range of -55? to +175?.