1EDF5673KXUMA1 Infineon

GaN EiceDRIVER product family Single-channel functional and reinforced isolated gate-drive ICs for high-voltage enhancement-mode GaN HEMTs Features Dedicated gate driver ICs for high-voltage GaN power switches (CoolGaN, GIT technology based products) low driving impedance (on-resistance 0.85 source, 0.35 sink) resistor programmable gate current (typ. 10 mA) in steady on state programmable negative gate voltage to completely avoid spurious turn-on Single output supply voltage (typ. 8 V, floating) Switching behavior independent of duty-cycle (2of voltage levels) Differential concept to ensure negative gate drive voltage under any condition Fast input-to-output propagation (37 ns) with excellent stability (+7/-6 ns) Galvanic input-to-output isolation based on coreless transformer (CT) technology Common mode transient immunity (CMTI) > 200 V/ns 3 package versions 1EDF5673K: 13-pin LGA (5 x 5 mm, PG-TFLGA-13-1) for functional isolation (1.5 kV) 1EDF5673F: 16-pin P-DSO (150 mil, PG-DSO-16-11) for functional isolation (1.5 kV) 1EDS5663H: 16-pin P-DSO (300 mil, PG-DSO-16-30) for reinforced isolation Fully qualified according to JEDEC for Industrial Applications Description CoolGaN and similar GaN switches require a continuous gate current of a few mA in theiro state. Besides, due to low threshold voltage and extremely fast switching transients, a negativeof voltage level may be needed. The widely used RC-coupled gate driver fulfils these requirements, however it suffers from a duty-cycle dependence of switching dynamics and the lack of negative gate drive in specific situations. Infineon s GaN EiceDRIVER solves these issues with very low effort. The two output stages shown below enable a zero of level to eliminate any duty-cycle dependence. In addition, the differential topology is able to provide negative gate drive without the need for a negative supply voltage. However, it requires a floating supply voltage not compatible with bootstrapping. GaN EiceDRIVER Controller VDD > 3.5V R VDDS VDDI VDDI UVLO UVLO VDD in outS CT VDD R tr I shunt VDDO SLDO SLDO TX RX S1 R SS OUTS Control C VDDO C C Logic S 2 PWM GNDS PWM Control C VDDI Logic GNDI CoolGaN VDDG D UVLO outG IGx60Rxx DISABLE GPIOx TX RX S 3 OUTG G Control TNEG delay Logic t 1 S SS 4 R t1 GNDG GND S GNDI Final datasheet Please read the Important Notice and Warnings at the end of this document Rev. 2.3 www.infineon.com 2020-10-22 Input-to-output isolation 1EDF5673K, 1EDF5673F, 1EDS5663H GaN gate driver Potential applications Server, telecom and industrial SMPS Adapter and charger power supply Isolation and safety approval 1EDS5663H with reinforced isolation: certification by VDE, UL, CSA, CQC according to DIN V VDE V 0884-10 (2006-12) with V = 8 kV , V = 6.25 kV (tested at 10 kV ) IOTM pk IOSM pk pk UL1577 (Ed. 5) with V = 5.7 kV ISO RMS IEC60950-1 and IEC62368-1 system standards and corresponding CQC certificates 1EDF5673K and 1EDF5673F with functional isolation: production test with 1.5 kV for 10 ms Product versions In accordance with the isolation classification for primary and secondary side control, GaN EiceDRIVER is available in different package versions Table 1 GaN EiceDRIVER product family overview Part Package Source/sink Input-to-output isolation number output Isolation class Rating Surge testing Safety resistance certification 1EDF5673K LGA-13 0.85 / 0.35 functional V = 1.5 kV n.a n.a IO DC 5 x 5 mm 1EDF5673F DSO-16 0.85 / 0.35 functional V = 1.5 kV n.a n.a IO DC 150 mil 1) 1EDS5663H DSO-16 0.85 / 0.35 reinforced V = 8 kV V >10 kV VDE0884-10 IOTM pk IOSM pk 2) 300 mil (safe) (VDE0884-10) (IEC60065) UL1577 2) V = 5.7 kV IEC60950-1 , ISO RMS 2) (UL1577) 62368-1 (CQC) 1) tested according to VDE0884-10 specifications with certification no longer available due to standard expiration 2) certification pending Final datasheet 2 Rev. 2.3 2020-10-22