2ED2109 (4) S06F (J) 2ED2109 (4) S06F (J) 650 V half bridge gate driver with integrated bootstrap diode Features Product summary Unique Infineon Thin-Film-Silicon On Insulator (SOI)-technology V = 650 V max S OFFSET Negative VS transient immunity of 100 V I / I (typ.) = + 0.29 A/ - 0.7 A o+pk o-pk Floating channel designed for bootstrap operation V = 10 V to 20 V CC Operating voltages (VS node) upto + 650 V Internal deadtime = 540 ns typ. Maximum bootstrap voltage (VB node) of + 675 V t / t (typ.) = 740 ns/ 200 ns ON OFF Integrated ultra-fast, low resistance bootstrap diode Logic operational up to 11 V on VS Pin Negative voltage tolerance on inputs of 5 V Packages Independent under voltage lockout for both channels Schmitt trigger inputs with hysteresis 3.3 V, 5 V and 15 V input logic compatible Maximum supply voltage of 25 V Dual package options of DSO-8 and DSO-14 High and low voltage pins separated for maximum creepage and clearance (2ED21094S06J version) Separate logic and power ground with the 2ED21094S06J version DSO-8 DSO-14 Internal 540 ns dead time and programmable up to 5 us with external resistor (2ED21094S06J only) Shutdown input turns off both channels RoHS compliant Potential applications Driving IGBTs, enhancement mode N-Channel MOSFETs in various power electronic applications. Typical Infineon recommendations are as below: Motor drives, general purpose inverters having TRENCHSTOP IGBT6 or 600 V EasyPACK modules or its equivalent power stages Refrigeration compressors, induction cookers, other major home appliances having RCD series IGBTs or TRENCHSTOP family IGBTs or their equivalent power stages Battery operated small home appliances such as power tools, vaccum cleaners using low voltage OptiMOS MOSFETs or their equivalent power stages Totem pole, half-bridge and full-bridge converters in offline AC-DC power supplies for industrial SMPS having high voltage CoolMOS super junction MOSFETs or TRENCHSTOP H3 and WR5 IGBT series or their equivalent High power LED and HID lighting having CoolMOS super junction MOSFETs Electric vehicle (EV) charging stations and battery management systems Driving 650 V SiC MOSFETs in above applications Product validation Qualified for industrial applications according to the relevant tests of JEDEC47/20/22 Ordering information Standard pack Base part number Package type Orderable part number Form Quantity 2ED2109S06F DSO - 8 Tape and Reel 2500 2ED2109S06FXUMA1 2ED21094S06J DSO - 14 Tape and Reel 2500 2ED21094S06JXUMA1 Datasheet Please read the Important Notice and Warnings at the end of this document V 2.22 www.infineon.com/soi Page 1 of 26 2020-07-02 2ED2109 (4) S06F (J) 650 V half bridge gate driver with integrated bootstrap diode Description The 2ED2109 (4) S06F (J) is a high voltage, high speed power MOSFET and IGBT driver with dependent high and low side referenced output channels. Based on Infineons SOI-technology there is an excellent ruggedness and noise immunity with capability to maintain operational logic at negative voltages of up to - 11 V on VS pin (VCC = 15 V) on transient voltages. There are not any parasitic thyristor structures present in the device, hence no parasitic latch up may occur at all temperature and voltage conditions. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3 V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET, SiC MOSFET or IGBT in the high side configuration, which operate up to 650 V. Up to 650V Integrated RBS DBS Integrated Up to 650V RBS DBS VCC 14 1 VCC 1 VB 8 VCC VCC IN VB 2 IN 13 SD HO 12 3 SD 2 IN 7 IN HO TO LOAD RDT DT TO LOAD 4 VS 11 3 6 SD SD VS 10 VSS 5 VSS 4 5 9 COM LO 6 COM 7 8 LO 2ED2109S06F 2ED21094S06J * Bootstrap diode is monolithically integrated * Please refer to our application notes and design tips for proper circuit board layout. Figure 1 Typical application block diagram Summary of feature comparison of the 2ED210x family: Table 1 Cross Input conduction Part No. Deadtime Ground pins t / t Package ON OFF logic prevention logic 2ED2106S06F COM DSO - 8 HIN, LIN No None 2ED21064S06J VSS / COM DSO - 14 200 ns / 2ED2108S06F Internal 540 ns COM DSO - 8 200 ns HIN, LIN Yes Programmable 2ED21084S06J VSS / COM DSO - 14 540 ns - 5000 ns 2ED2109S06F Internal 540 ns COM DSO - 8 IN, SD Yes Programmable 2ED21094S06J VSS / COM 740 ns / DSO - 14 540 ns - 5000 ns 200 ns Programmable 2ED21091S06F IN, DT/SD Yes COM DSO 8 540 ns - 2700 ns Datasheet 2 of 26 V 2.022 www.infineon.com/soi 2020-07-02