2ED2182 (4) S06F (J) 2ED2182 (4) S06F (J) 650 V half-bridge gate driver with integrated bootstrap diode Features Product summary Unique Infineon Thin-Film-Silicon On Insulator (SOI)-Technology V = 650 V max S OFFSET Negative VS transient immunity of 100 V I / I (typ.) =+ 2.5 A/ - 2.5 A o+pk o- pk Floating channel designed for bootstrap operation V = 10 V to 20 V CC Operating voltages (VS node) upto + 650 V Delay matching = 35 ns max. Maximum bootstrap voltage (VB node) of + 675 V Deadtime (typ.) = 400 ns Integrated ultra-fast, low resistance bootstrap diode t / t (typ.) = 200 ns/ 200 ns ON OFF Integrated shoot-through protection with built-in dead time Logic Operational up to 11 V on VS Pin Negative Voltage Tolerance On Inputs of 5 V Packages Independent under voltage lockout for both channels Schmitt trigger inputs with hysteresis 3.3 V, 5 V and 15 V input logic compatible Maximum supply voltage of 25 V Dual package options of DSO-8 and DSO-14 High and Low Voltage Pins Separated for Maximum Creepage and Clearance (2ED21824S06J version) Separate logic and power ground with the 2ED21824S06J version DSO-14 DSO-8 RoHS compliant Potential applications Driving IGBTs, enhancement mode N-Channel MOSFETs in various power electronic applications. Typical Infineon recommendations are as below: Motor drives, general purpose inverters having TRENCHSTOP IGBT6 or 600 V EasyPACK modules Refrigeration compressors, induction cookers, other major home appliances having RCD series IGBTs or TRENCHSTOP family IGBTs or their equivalent power stages Battery operated small home appliances such as power tools, vaccum cleaners using low voltage OptiMOS MOSFETs or their equivalent power stages Totem pole, half-bridge and full-bridge converters in offline AC-DC power supplies for industrial SMPS having high voltage CoolMOS super junction MOSFETs or TRENCHSTOP H3 and WR5 IGBT series or their equivalent High power LED and HID lighting having CoolMOS super junction MOSFETs Electric vehicle (EV) charging stations and battery management systems Driving 650 V SiC MOSFETs in above applications Product validation Qualified for industrial applications according to the relevant tests of JEDEC47/20/22 Ordering information Standard pack Base part number Package type Orderable part number Form Quantity 2ED2182S06F DSO-8 Tape and Reel 2500 2ED2182S06FXUMA1 2ED21824S06J DSO -14 Tape and Reel 2500 2ED21824S06JXUMA1 Datasheet Please read the Important Notice and Warnings at the end of this document V 2.21 www.infineon.com/soi Page 1 of 25 2020-07-07 2ED2182 (4) S06F (J) 650 V half-bridge gate driver with integrated bootstrap diode Description The 2ED2182(4)S06F(J) is a half-bridge high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Based on Infineons SOI-technology there is an excellent ruggedness and noise immunity with capability to maintain operational logic at negative voltages of up to - 11 V on VS pin (V = 15 V) on transient voltages. There are not any parasitic thyristor structures present DC CC in the device, hence no parasitic latch up may occur at all temperature and voltage conditions. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3 V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET, SiC MOSFET or IGBT in the high side configuration, which operate up to 650 V. Up to 650V Up to 650V 2ED21824S06J HIN 1 HIN 14 2ED2182S06F LIN 2 LIN VB 13 HIN 1 HIN VB 8 VSS 3 12 VSS HO HO RDT LIN 2 LIN 7 11 4 DT VS VS 3 6 COM TO LOAD 5 COM 10 VCC TO LOAD VCC 5 4 LO 6 LO 9 VCC 7 8 VCC *Bootstrap diode is monolithically integrated This diagram shows electrical connections only. Please refer to our application notes and design tips for proper circuit board layout. Figure 1 Typical application block diagram Summary of feature comparison of the 2ED218x family Table 1 Drive Cross current Input conduction Ground Part No. Package Deadtime tON / tOFF logic prevention pins source / logic sink + 2.5 A / 2ED2181S06F DSO 8 COM - 2.5 A HIN, LIN No None + 2.5 A / VSS / 2ED21814S06J DSO 14 - 2.5 A COM + 2.5 A / 2ED2182S06F DSO 8 Internal 400 ns COM - 2.5 A 200 ns / HIN, LIN Yes + 2.5 A / Programmable VSS / 200 ns 2ED21824S06J DSO 14 - 2.5 A 400 ns - 5000 ns COM + 2.5 A / 2ED2183S06F DSO 8 Internal 400 ns COM - 2.5 A Yes HIN, LIN + 2.5 A / Programmable VSS / 2ED21834S06J DSO 14 - 2.5 A 400 ns - 5000 ns COM + 2.5 A / 600 ns / 2ED2184S06F DSO 8 Internal 400 ns COM - 2.5 A 200 ns Yes IN, SD + 2.5 A / Programmable VSS / 2ED21844S06J DSO 14 - 2.5 A 400 ns - 5000 ns COM Datasheet 2 of 25 V 2.21 www.infineon.com/soi 2020-07-07