Solution Brief Combining CoolSiC, CoolMOS and EiceDRIVER For energy-smart SMPS designs in industrial applications Telecom, datacenter and industrial SMPS are driven by the trends of improved energy System features efficiency, high power density and ever growing output power. Wide-bandgap materials, such as the CoolSiC MOSFET 650 V and the CoolGaN 600 V e-mode HEMT are enablers CoolSiC 650 V to move towards high performance topologies such as CCM totem-pole PFC. A topology Optimized switching behavior that ensures 99% efficiency in the PFC stage, leading to 98% overall system efficiency, at higher currents while hard commutation is present in every switching cycle. While CoolGaN excels in Excellent thermal behavior delivering the best efficiency at the highest operating frequency, the CoolSiC MOSFET Increased avalanche capability provides the right balance of high efficiency, reliability and ease of use. 80% lower Q and Q over rr oss SJ MOSFET offerings Cost-competitiveness in CCM totem-pole PFC 600 V CoolMOS S7 The CoolSiC MOSFET 650 V comes along with roughly 80% lower Q and Q compared to Best-in-class R in SMD packages rr oss DS(on) the best silicon alternatives. This ensures outstanding hard-commutation robustness. Due Optimized for conduction performance to the low temperature dependency of on-state resistance (R ), the 99% efficiency level in low-frequency-switching DS(on) can be reached by using a SiC MOSFET with a typical R of 72 m, resulting in system topologies DS(on) cost reduction. The second half-bridge in the CCM totem-pole PFC runs at low frequencies EiceDRIVER for half-cycle management. In this case the perfect choice is the 600 V CoolMOS S7, 13 V UVLO off threshold for a SJ MOSFET, designed for low-frequency switching, offering the lowest R at the best price. safe-operation area DS(on) 0.35 / 0.85 output stage impedance Highest reliability at improved performance in LLC 7 ns propagation delay precision A full SMPS design requires a DC-DC stage. LLCs are commonly used soft-switching topologies in which non-continuous hard commutation can occur under certain conditions. Fast-body diode CoolMOS series are offering a cost/performance solution System benefits but due to the outstanding Q and Q level of the CoolSiC MOSFET designs can be even rr oss more reliable and at the same time further improve the efficiency level. High performance, high reliability and ease of use EiceDRIVER optimized for CoolSiC MOSFET 650 V Allows high system efficiency 1-channel and 2-channel galvanically isolated EiceDRIVER gate-driver ICs are the best Reduces system cost and complexity choices for optimal CoolSiC MOSFET 650 V operation. For use in CCM totem-pole PFC Enables smaller system size functional isolation provides the required robustness against switching noise. In secondary- Works in topologies with continuous side controlled LLC stages reinforced isolation is indispensable. 13V UVLO off threshold hard commutation guarantees safe CoolSiC operation at current levels required by the applications. The Fit for high temperature and harsh industry-leading low output-stage impedance minimizes CoolSiC switching losses. The operations excellent 7 ns propagation delay accuracy minimizes dead-time losses. Enables bidirectional topologies 600 V CoolMOS S7 is best driven with the EiceDRIVER 2EDF7275F. www.infineon.com/coolsic-mosfet-discretes www.infineon.com/coolmos www.infineon.com/eicedriverSolution Brief Every switch needs a driver Combining the latest CoolSiC 650 V, the 600 V CoolMOS S7 and the 1EDN and 2EDN EiceDRIVER families enables engineers to easily design systems which are more efficient, compact, reliable and cost effective. The block diagram gives an idea of such a system: High efficiency CoolSiC totem pole PFC in server switched mode power supply (SMPS) Totem pole Synchronous Resonant LLC Full-bridge PFC rectifie r CoolSiC 650 V 600 V CoolMOS S7 CoolSiC 650 V CoolSiC 650 V OptiMOS OptiMOS AC EMI LINE filter OptiMOS OptiMOS CoolSiC 650 V 600 V CoolMOS S7 CoolSiC 650 V CoolSiC 650 V 2x EiceDRIVER 2EDF7275 EiceDRIVER 2EDF9275F PFC LLC 2x EiceDRIVER controller controller EiceDRIVER 2EDS9265H 2EDF7275F Portfolio selection CoolSiC MOSFETs 650 V EiceDRIVER for CoolMOS S7 EiceDRIVER for CoolSiC MOSFET 650 V CoolMOS S7 Package TO-247-4 TO-247-3 1-channel 2-channel Package TO-220 TOLL 2-channel EiceDRIVER EiceDRIVER EiceDRIVER R R DS(on) DS(on) typ. max. 27 m IMZA65R027M1H IMW65R027M1H 1EDB9275F* 2EDF9275F* 10 m IPDQ60R010S7 2EDS9265H* 48 m IMZA65R048M1H IMW65R048M1H 22 m IPP60R022S7 IPT60R022S7 2EDF7275F 72 m IMZA65R072M1H IMW65R072M1H 40 m IPT60R040S7 107 m IMZA65R107M1H IMW65R107M1H 65 m IPT60R065S7 * Coming soon Published by Please note Additional information Infineon Technologies Austria AG This document is for information purposes only and any infor- For further information on technologies, our products, the 9500 Villach, Austria mation given herein shall in no event be regarded as a warranty, application of our products, delivery terms and conditions guarantee or description of any functionality, conditions and/or and/or prices, please contact your nearest Infineon Technologies 2021 Infineon Technologies AG. quality of our products or any suitability for a particular purpose. office (www.infineon.com). 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