PD- 90333G IRF130 JANTX2N6756 JANTXV2N6756 100V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED REF: MIL-PRF-19500/542 HEXFET TRANSISTORS THRU-HOLE (TO-204AA) Product Summary Part Number BV RDS(on) I DSS D IRF130 100V 14A 0.18 TO-3 (TO-204AA) Description Features HEXFET MOSFET technology is the key to IR Hirel advanced Repetitive Avalanche Ratings line of power MOSFET transistors. The efficient geometry and Dynamic dv/dt Rating unique processing of this latest State of the Art design Hermetically Sealed achieves: very low on-state resistance combined with high trans Simple Drive Requirements conductance superior reverse energy and diode recovery dv/dt ESD Rating: Class 1C per MIL-STD-750, capability. Method 1020 The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching and temperature stability of the electrical parameters. They are well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits. Absolute Maximum Ratings Symbol Value Parameter Units I V = 10V, T = 25C Continuous Drain Current 14 D1 GS C A I V = 10V, T = 100C Continuous Drain Current 9.0 D2 GS C I T = 25C Pulsed Drain Current 56 DM C P T = 25C Maximum Power Dissipation 75 W D C Linear Derating Factor 0.6 W/C V Gate-to-Source Voltage 20 V GS E Single Pulse Avalanche Energy 75 mJ AS I Avalanche Current 14 A AR E Repetitive Avalanche Energy 7.5 mJ AR dv/dt Peak Diode Recovery 5.5 V/ns T Operating Junction and J -55 to + 150 T Storage Temperature Range C STG Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s) Weight 11.5 (Typical) g For footnotes refer to the page 2. 1 2019-07-08 International Rectifier HiRel Products, Inc. IRF130 JANTX2N6756/JANTXV2N6756 Electrical Characteristics Tj = 25C (Unless Otherwise Specified) Symbol Parameter Min. Typ. Max. Units Test Conditions BV Drain-to-Source Breakdown Voltage 100 V V = 0V, I = 1.0mA DSS GS D BV /T DSS J Breakdown Voltage Temp. Coefficient 0.13 V/C Reference to 25C, I = 1.0mA D R DS(on) 0.18 V = 10V, I = 9.0A GS D2 Static Drain-to-Source On-Resistance 0.21 V = 10V, I = 14A GS D1 V GS(th) Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A DS GS D I 25 V = 80V, V = 0V DSS DS GS Zero Gate Voltage Drain Current A 250 V = 80V,V = 0V,T =125C DS GS J I = 20V Gate-to-Source Leakage Forward 100 V GSS GS nA Gate-to-Source Leakage Reverse -100 V = -20V GS Q Total Gate Charge 12 35 I = 14A G D1 Q Gate-to-Source Charge 2.5 10 V = 50V nC GS DS V = 10V Q Gate-to-Drain (Miller) Charge 5.0 15 GD GS t Turn-On Delay Time 35 V = 50V d(on) DD tr Rise Time 80 I = 14A D1 ns t Turn-Off Delay Time 60 R = 7.5 d(off) G t Fall Time 45 V = 10V f GS Measured from Drain lead (6mm / 0.25 in from package) to Source Ls +L Total Inductance 6.1 nH D lead (6mm/ 0.25 in from package) C Input Capacitance 650 V = 0V iss GS C Output Capacitance 250 pF V = 25V oss DS C Reverse Transfer Capacitance 44 = 1.0MHz rss Source-Drain Diode Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units Test Conditions I Continuous Source Current (Body Diode) 14 S A I Pulsed Source Current (Body Diode) 56 SM V Diode Forward Voltage 1.5 V T = 25C,I = 14A, V = 0V SD J S GS t Reverse Recovery Time 300 ns T = 25C,I = 14A,V 30V rr J F DD Q Reverse Recovery Charge 3.0 C di/dt = 100A/s rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) on S D Thermal Resistance Symbol Parameter Min. Typ. Max. Units R Junction-to-Case 1.67 JC C/W Junction-to-Ambient (Typical socket mount) R JA 30 Footnotes: Repetitive Rating Pulse width limited by maximum junction temperature. V = 50V, starting T = 25C, L= 0.77mH, Peak I = 14A,V = 10V. DD J L GS I 14A, di/dt 140A/s, V 100V, T 150C. Suggested RG =7.5 SD DD J Pulse width 300 s Duty Cycle 2% 2 2019-07-08 International Rectifier HiRel Products, Inc.