The documentation and process conversion INCH-POUND measures necessary to comply with this document shall be completed by 20 January 2014. MIL-PRF-19500/595K 20 November 2013 SUPERSEDING MIL-PRF-19500/595J 25 October 2010 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT, TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N7236, 2N7237, 2N7236U, AND 2N7237U, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC This specification is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for a P-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance for each unencapsulated device type die, with avalanche energy ratings (E and E ) and maximum AS AR avalanche current (I ). AR 1.2 Physical dimensions. See figure 1 (TO-254AA), figure 2 (TO-267AB) for surface mount devices, and figure 3 and 4 for JANHC and JANKC (die) dimensions. 1.3 Maximum ratings (T = +25C, unless otherwise specified). C Min Type P (1) P R V V I (3) (4) I (3) (4) I I T T T JC (BR)DSS GS D1 D2 S DM J T = T = (2) V = 0 T = T = (5) and C A GS C C I = -1.0 T +25C +25C D +25C +100C STG mA dc W W V dc V dc A dc A dc A dc A (pk) C/W C 2N7236, 2N7236U 125 4.0 1.0 -100 -18 -11 -18 -72 -55 to +150 20 2N7237, 2N7237U 125 4.0 1.0 -200 -11 -7 -11 -44 -55 to +150 20 See notes next page. * Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductor dla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at MIL-PRF-19500/595K 1.3 Maximum ratings - continued. Type I E E r max (6) AR AS AR DS(on) V = -10 V dc GS I = I D D2 T = +25C T = +150C J J A mJ mJ ohm ohm 2N7236, 2N7236U -18 500 12.5 0.20 0.400 2N7237, 2N7237U -11 500 12.5 0.51 1.122 (1) Derate linearly 1.0 W/ C for T > +25C. C (2) See figure 5, thermal impedance curves. (3) The following formula derives the maximum theoretical I limit. I is limited by package and internal wires D D and may be limited by pin diameter: - TJM TC = I D x ( on ) at R R T JC DS JM (4) See figure 6, maximum drain current graphs. (5) I = 4 X I as calculated in footnote (3). DM D1 (6) Pulsed (see 4.5.1). 1.4 Primary electrical characteristics. T = +25C (unless otherwise specified). C Max I Max r (1) DSS1 DS(on)1 Type Min V V V = 0 (BR)DSS GS(th)1 GS V = 0 V = 80 percent I = I GS V V DS D D2 DS GS I = -1.0 mA dc I = -0.25 mA dc of rated V V = 10 V D D DS GS V dc V dc A dc Ohms Min Max 2N7236, 2N7236U -100 -2.0 -4.0 -25 0.20 2N7237, 2N7237U -200 -2.0 -4.0 -25 0.51 (1) Pulsed (see 4.5.1). 2