BAS3010B03WE6327HTSA1 Infineon

BAS3010B... Medium Power AF Schottky Diode Forward current: 1 A Reverse voltage: 30 V Low forward voltage, low reverse current For high efficiency DC/DC conversion, fast switching, protection and clamping applications 1) Pb-free (RoHS compliant) package Qualified according AEC Q101 BAS3010B-03W Type Package Configuration Marking BAS3010B-03W SOD323 single 2/ red Maximum Ratings at T = 25C, unless otherwise specified A Parameter Symbol Value Unit 2) 30 V Diode reverse voltage V R 2) 1 A Forward current I F Average rectified forward current (50/60Hz, sinus) I 1 FAV Repetitive peak forward current I 3.5 FRM (t 1 ms, D 0.5) p Non-repetitive peak surge forward current I 10 FSM (t 10 ms) 150 C Junction temperature T j Operating temperature range T -65 ... 125 op Storage temperature T -65 ... 150 stg 1 Pb-containing package may be available upon special request 2 For T > 25C the derating of V and I has to be considered. Please refer to the attached curves. A R F 1 2007-04-19BAS3010B... Thermal Resistance Parameter Symbol Value Unit 1) K/W Junction - soldering point R 82 thJS Electrical Characteristics at T = 25C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. DC Characteristics 2) Reverse current I A R V = 5 V - - 5 R V = 10 V - - 10 R V = 30 V - - 20 R 2) mV Forward voltage V F I = 1 mA - 230 280 F I = 10 mA - 300 350 F I = 100 mA - 360 420 F I = 500 mA - 420 480 F I = 1 A - 480 550 F AC Characteristics - 33 40 pF Diode capacitance C T V = 5 V, f = 1 MHz R 1 For calculation of R please refer to Application Note Thermal Resistance thJA 2 Pulsed test: t = 300 s D = 0.01 p 2 2007-04-19