BAS 52-02V H6327 Infineon

BAS52... Silicon Schottky Diode Medium current rectifier Schottky diode Low forward voltage at 200mA High reverse voltage 1) Pb-free (RoHS compliant) package Qualified according AEC Q101 BAS52-02V ESD (Electrostatic discharge) sensitive device, observe handling precaution Type Package Configuration Marking BAS52-02V SC79 single y Maximum Ratings at T = 25C, unless otherwise specified A Parameter Symbol Value Unit 45 V Diode reverse voltage V R 750 mA Forward current I F Average rectified forward current (50/60Hz, sinus) I 500 mA FAV Non-repetitive peak surge forward current I 2000 FSM t = 100 s 500 mW Total power dissipation P tot T 110C S 150 C Junction temperature T j Storage temperature T -65 ... 150 stg Thermal Resistance Parameter Symbol Value Unit 2) K/W Junction - soldering point R 60 thJS 1 Pb-containing package may be available upon special request 2 For calculation of R please refer to Application Note Thermal Resistance thJA 1 2007-04-19BAS52... Electrical Characteristics at T = 25C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. DC Characteristics Reverse current I A R V = 45 V - - 10 R V = 5 V, T = 70 C - - 30 R A V = 10 V - - 1 R V = 10 V, T = 85 C - - 80 R A mV Forward voltage V F I = 10 mA - 335 420 F I = 100 mA - 430 530 F I = 200 mA 400 500 600 F AC Characteristics - 5 10 pF Diode capacitance C T V = 10 V, f = 1 MHz R 2 2007-04-19