BAT1502ELE6327XTMA1 Infineon

BAT15-02EL Single silicon RF Schottky diode Product description This Infineon RF Schottky diode is a silicon low barrier N-type device with an integrated guard ring on-chip for over-voltage protection. Its low barrier height, low forward voltage and low junction capacitance make BAT15-02EL a suitable choice for mixer and detector functions in applications which frequencies are as high as 12 GHz. Feature list Low inductance L = 0.4 nH (typical) S Low capacitance C = 0.2 pF (typical) at voltage V = 0 V and frequency f = 1 MHz R TSLP-2-19 package (1 mm x 0.6 mm x 0.31 mm) with a 0402 foot print Pb-free, RoHS compliant and halogen-free Product validation Qualified for industrial applications according to the relevant tests of JEDEC47/20/22. Potential applications For mixers and detectors in: Mobile devices Modules and embedded systems Device information Table 1 Part information Product name / Ordering code Package Pin configuration Marking Pieces/Reel BAT15-02EL / BAT1502ELE6327XTMA1 TSLP-2-19 Single, leadless NN 15 k Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions Datasheet Please read the Important Notice and Warnings at the end of this document v1.0 www.infineon.com 2018-06-30BAT15-02EL Single silicon RF Schottky diode Table of contents Table of contents Product description 1 Feature list . 1 Product validation . 1 Potential applications 1 Device information . 1 Table of contents . 2 1 Absolute maximum ratings 2 2 Electrical performance in test fixture 3 2.1 Electrical characteristics . 3 2.2 Characteristic curves .3 3 Thermal characteristics . 5 4 Package information TSLP-2-19 . 7 5 References . 8 Revision history 8 Disclaimer . 9 1 Absolute maximum ratings Table 2 Absolute maximum ratings at T = 25 C, unless otherwise specified A Parameter Symb Values Unit Note or Test Condition ol Min. Max. Diode reverse voltage V 4 V R Forward current I 110 mA F 1) Total power dissipation P 100 mW T 84 C TOT S Junction temperature T 150 C J Operating temperature T -55 150 OP Storage temperature T -55 150 STG Attention: Stresses above the maximum values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Exceeding only one of these values may cause irreversible damage to the component. 1 T is the soldering point temperature. S Datasheet 2 v1.0 2018-06-30