BAT1504RE6152HTSA1 Infineon

BAT15-04R Reverse series silicon RF Schottky diode pair Product description These Infineon RF Schottky diodes are silicon low barrier N-type devices with an integrated guard ring on-chip for over-voltage protection. Their low barrier height, low forward voltage and low junction capacitance make BAT15-04R a suitable choice for mixer and detector functions in applications which frequencies are as high as 12 GHz. Feature list Low inductance L = 1.5 nH (typical) S Low capacitance C = 0.27 pF (typical) at 1 MHz Industry standard SOT23-3 package (2.9 mm x 2.4 mm x 1 mm) Pb-free, RoHS compliant and halogen-free Product validation Qualified for industrial applications according to the relevant tests of JEDEC47/20/22. Potential applications For mixers and detectors in: Satellite systems Low noise blocks for Ku bands Security systems Device information Table 1 Part information Product name / Ordering code Package Pin configuration Marking Pieces / Reel BAT15-04R / BAT1504RE6152HTSA1 SOT23-3 Reverse series pair 4R 3 k Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions Datasheet Please read the Important Notice and Warnings at the end of this document v2.01 www.infineon.com 2020-07-08BAT15-04R Reverse series silicon RF Schottky diode pair Table of contents Table of contents Product description 1 Feature list . 1 Product validation . 1 Potential applications 1 Device information . 1 Table of contents . 2 1 Absolute maximum ratings 2 2 Electrical performance in test fixture 3 2.1 Electrical characteristics . 3 2.2 Characteristic curves .4 3 Thermal characteristics . 6 4 Package information SOT23-3 . 8 Revision history 9 Disclaimer 10 1 Absolute maximum ratings Table 2 Absolute maximum ratings at T = 25 C, unless otherwise specified A Parameter Symbol Values Unit Note or test condition Min. Max. Diode reverse voltage V 4 V R Forward current I 110 mA F 1) Total power dissipation P 100 mW T 77 C TOT S Junction temperature T 150 C J Operating temperature T -55 150 OP Storage temperature T -55 150 STG Attention: Stresses above the maximum values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Exceeding only one of these values may cause irreversible damage to the component. 1 T is the soldering point temperature. S Datasheet 2 v2.01 2020-07-08