X-On Electronics has gained recognition as a prominent supplier of BAT 15-099R E6327 Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. BAT 15-099R E6327 Schottky Diodes & Rectifiers are a product manufactured by Infineon. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

BAT 15-099R E6327 Infineon

BAT 15-099R E6327 electronic component of Infineon
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Part No.BAT 15-099R E6327
Manufacturer: Infineon
Category: Schottky Diodes & Rectifiers
Description: Infineon Technologies Schottky Diodes & Rectifiers Silicon Schottky Diodes 4V 110mA
Datasheet: BAT 15-099R E6327 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.8371 ea
Line Total: USD 0.84 
Availability - 7343
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
7343
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ : 1
Multiples : 1
1 : USD 0.8371
10 : USD 0.6699
100 : USD 0.4686
500 : USD 0.3894
1000 : USD 0.363
3000 : USD 0.3256
6000 : USD 0.3245

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
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If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
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Cnhts
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We are delighted to provide the BAT 15-099R E6327 from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BAT 15-099R E6327 and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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BAT15-099R Cross-over ring silicon RF Schottky diodes Product description These Infineon RF Schottky diodes are silicon low barrier N-type devices with an integrated guard ring on-chip for over-voltage protection. Their low barrier height, low forward voltage and low junction capacitance make BAT15-099R a suitable choice for mixer functions in applications which frequencies are as high as 12 GHz. Feature list Low inductance L = 2 nH (typical) S Low capacitance C = 0.29 pF (typical) Industry standard SOT143 (2.9 mm x 2.4 mm x 1 mm) Pb-free, RoHS compliant and halogen free Product validation Qualified for industrial applications according to the relevant tests of JEDEC47/20/22. Potential applications For mixers in: Satellite systems Low noise blocks for Ku bands Security systems Device information Table 1 Part information Product name / Ordering code Package Pin configuration Marking Pieces / Reel BAT15-099R / BAT15099RE6327HTSA1 SOT143 Cross-over ring S6s 3 k Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions Datasheet Please read the Important Notice and Warnings at the end of this document v1.0 www.infineon.com 2018-06-30BAT15-099R Cross-over ring silicon RF Schottky diodes Table of contents Table of contents Product description 1 Feature list . 1 Product validation . 1 Potential applications 1 Device information . 1 Table of contents . 2 1 Absolute maximum ratings 2 2 Electrical performance in test fixture 3 2.1 Electrical characteristics . 3 2.2 Characteristic curves .4 3 Thermal characteristics . 6 4 Package information SOT143 8 Revision history 9 Disclaimer 10 1 Absolute maximum ratings Table 2 Absolute maximum ratings at T = 25 C, unless otherwise specified A Parameter Symbol Values Unit Note or test condition Min. Max. Diode reverse voltage V 4 V R Forward current I 110 mA F 1) Total power dissipation P 100 mW T 67 C TOT S Junction temperature T 150 C J Operating temperature T -55 150 OP Storage temperature T -55 150 STG Attention: Stresses above the maximum values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Exceeding only one of these values may cause irreversible damage to the component. 1 T is the soldering point temperature. S Datasheet 2 v1.0 2018-06-30

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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