BAT62... Silicon Schottky Diode Low barrier diode for detectors up to GHz frequencies Pb-free (RoHS compliant) package BAT62 BAT62-03W BAT62-07W BAT62-02L BAT62-07L4 BAT62-02V BAT62-02LS BAT62-02W 4 3 D1 D2 1 2 1 2 BAT62-09S ESD (Electrostatic discharge) sensitive device, observe handling precaution Type Package Configuration L (nH) Marking S BAT62-02W** SCD80 single 0.6 62 BAT62 SOT143 anti-parallel pair 2 62s BAT62-02L TSLP-2-1 single, leadless 0.4 L BAT62-02LS* TSSLP-2-1 single, leadless 0.2 U BAT62-02V SC79 single 0.6 k BAT62-03W SOD323 single 1.8 white L BAT62-07L4 TSLP-4-4 parallel pair, leadless 0.4 62 BAT62-07W SOT343 parallel pair 1.8 62s BAT62-09S SOT363 parallel high, high isolation 1.6 69s * Preliminary Data ** Not for new design 2014-02-13 1BAT62... Maximum Ratings at T = 25 C, unless otherwise specified A Parameter Symbol Value Unit 40 V Diode reverse voltage V R 20 mA Forward current I F Total power dissipation P tot BAT62, T 85 C 100 S BAT62-02L, -07L4, -03W, T 108 C 100 S BAT62-02W, -02V, T 109 C 100 S BAT62-07W, T 103 C 100 S BAT62-09S, T 105 C 100 S 150 C Junction temperature T j Storage temperature T -55 ... 150 stg Thermal Resistance Parameter Symbol Value Unit 1) Junction - soldering point R thJS BAT62 650 BAT62-02L, -07L4, -03W 420 BAT62-02W, 02V 410 BAT62-07W 470 BAT62-09S tbd Electrical Characteristics at T = 25 C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. DC Characteristics - - 10 Reverse current I A R V = 40 V R - 0.58 1 V Forward voltage V F I = 2 mA F 2) - - 20 mV Forward voltage matching V F I = 2 mA F 1 For calculation of R please refer to Application Note AN077 (Thermal Resistance Calculation) thJA 2 V is the difference between lowest and highest V in a multiple diode component. F F 2014-02-13 2