BAT64... Silicon Schottky Diodes For low-loss, fast-recovery, meter protection, bias isolation and clamping application Integrated diffused guard ring Low forward voltage 1) Pb-free (RoHS compliant) package Qualified according AEC Q101 BAT64 BAT64-02W BAT64-04 BAT64-05 BAT64-06 BAT64-04W BAT64-05W BAT64-06W ESD (Electrostatic discharge) sensitive device, observe handling precaution Type Package Configuration L (nH) Marking S BAT64 SOT23 single 1.8 63s BAT64-02W SCD80 single 0.6 64 BAT64-04 SOT23 series 1.8 64s BAT64-04W SOT323 series 1.4 64s BAT64-05 SOT23 common cathode 1.8 65s BAT64-05W SOT323 common cathode 1.4 65s BAT64-06 SOT23 common anode 1.8 66s BAT64-06W SOT323 common anode 1.4 66s 1 Pb-containing package may be available upon special request 1 2007-06-11BAT64... Maximum Ratings at T = 25C, unless otherwise specified A Parameter Symbol Value Unit 40 V Diode reverse voltage V R 250 mA Forward current I F 800 Non-repetitive peak surge forward current I FSM (t 10ms) 120 Average rectified forward current (50/60Hz, sinus) I FAV mW Total power dissipation P tot BAT64, T 86C 250 S BAT64-02W, T 121C 250 S BAT64-04, BAT64-06, T 61C 250 S BAT64-04W, BAT64-06W, T 111C 250 S BAT64-05, T 36C 250 S BAT64-05W, T 104C 250 S 150 C Junction temperature T j Storage temperature T -55 ... 150 stg Thermal Resistance Parameter Symbol Value Unit 1) K/W Junction - soldering point R thJS BAT64 255 BAT64-02W 115 BAT64-04, BAT64-06, 355 BAT64-04W, BAT64-06W 155 BAT64-05 455 BAT64-05W 185 1 For calculation of R please refer to Application Note Thermal Resistance thJA 2 2007-06-11