BAT68E6327HTSA1 Infineon

BAT68... Silicon Schottky Diodes For mixer applications in the VHF / UHF range For high-speed switching applications Pb-free (RoHS compliant) package BAT68 BAT68-04 BAT68-06 BAT68-07W BAT68-08S BAT68-04W BAT68-06W ESD (Electrostatic discharge) sensitive device, observe handling precaution Type Package Configuration L (nH) Marking S BAT68 SOT23 single 1.8 83s BAT68-04 SOT23 series 1.8 84s BAT68-04W SOT323 series 1.4 84s BAT68-06 SOT23 common anode 1.8 86s BAT68-06W SOT323 common anode 1.4 86s BAT68-07W SOT343 parallel pair 1.6 87s BAT68-08S SOT363 parallel triple 1.4 83s 2011-06-15 1BAT68... Maximum Ratings at T = 25C, unless otherwise specified A Parameter Symbol Value Unit 8 V Diode reverse voltage V R 130 mA Forward current I F mW Total power dissipation P tot BAT68, T 77C 150 S BAT68-04, BAT68-06, T 61C 150 S BAT68-04W/-06W/-08S, T 92C 150 S BAT68-07W, T 89C 150 S 150 C Junction temperature T j Storage temperature T -55 ... 150 stg Thermal Resistance Parameter Symbol Value Unit 1) K/W Junction - soldering point R thJS BAT68 490 BAT68-04, BAT68-06 590 BAT68-04W-BAT68-06W, BAT68-08S 390 BAT68-07W 410 Electrical Characteristics at T = 25C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. DC Characteristics 8 - - V Breakdown voltage V (BR) I = 10 A (BR) Reverse current I A R V = 1 V - - 0.1 R V = 1 V, T = 60 C - - 1.2 R A mV Forward voltage V F I = 1 mA - 318 340 F I = 10 mA 340 390 500 F 1 For calculation of R please refer to Application Note Thermal Resistance thJA 2011-06-15 2