BB 844 E6327 Infineon

BB844 Silicon Variable Capacitance Diode For FM radio tuner with extended frequency band 77MHz to 108MHz Designed for application requiring back-to-back diode configuration for optimum signal distortion and detuning High tuning ratio at low supply voltage (car radio) Monolitic chip (common cathode) for perfect dual diode tracking Good C- V linearity High figure of merit Pb-free (RoHS compliant) package BB844 Type Package Configuration L (nH) Marking S BB844 SOT23 common cathode 1.8 SNs Maximum Ratings at T = 25C, unless otherwise specified A Parameter Symbol Value Unit 18 V Diode reverse voltage V R 20 Peak reverse voltage V RM 50 mA Forward current I F C Operating temperature range T -55 ... 150 op Storage temperature T -55 ... 150 stg 2011-06-15 1BB844 Electrical Characteristics at T = 25C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. DC Characteristics Reverse current I nA R V = 16 V - - 20 R V = 16 V, T = 85 C - - 200 R A AC Characteristics pF Diode capacitance C T V = 2 V, f = 1 MHz 42.5 43.75 45 R V = 4 V, f = 1 MHz 25 27 29 R V = 8 V, f = 1 MHz 10 11.5 13 R 3.2 3.8 - Capacitance ratio C /C T2 T8 V = 2 V, V = 8 V, f = 1 MHz R R 1) - - 1.5 Capacitance matching C /C % T T V = 2V to 8V , f = 1 MHz R Series resistance r - 0.28 - S V = 2 V, f = 100 MHz R 1 For details please refer to Application Note 047. 2011-06-15 2