BBY56... Silicon Tuning Diode Excellent linearity Low series resistance Designed for low tuning voltage operation for VCO s in mobile communications equipment Very low capacitance spread Pb-free (RoHS compliant) package BBY56-02V BBY56-02W BBY56-03W Type Package Configuration Marking BBY56-02V SC79 single 9 BBY56-02W* SCD80 single 66 BBY56-03W SOD323 single red 6 * Not for new design Maximum Ratings at T = 25 C, unless otherwise specified A Parameter Symbol Value Unit 10 V Diode reverse voltage V R 20 mA Forward current I F C Operating temperature range T -55 ...150 op Storage temperature T -55 ...150 Stg 2014-02-11 1BBY56... Electrical Characteristics at T = 25 C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. DC Characteristics Reverse current I nA R V = 6 V - - 5 R V = 6 V, T = 85 C - - 100 R A AC Characteristics pF Diode capacitance C T V = 1 V, f = 1 MHz 37 40 43 R V = 2 V, f = 1 MHz 22 - 25 R V = 3 V, f = 1 MHz 14.8 15.8 16.8 R V = 4 V, f = 1 MHz - 12.1 - R Capacitance ratio C /C T1 T3 V = 1 V, V = 3 V, f = 1 MHz 2.15 2.53 - R R V = 1 V, V = 4 V, f = 1 MHz - 3.3 - R R Series resistance r - 0.25 - S V = 1 V, f = 470 MHz R 2014-02-11 2