BBY57... Silicon Tuning Diode Excellent linearity High Q hyperabrupt tuning diode Low series resistance High capacitance ratio Designed for low tuning voltage operation for VCO s in mobile communications equipment For control elements such as TCXOs and VCXOs 1) Pb-free (RoHS compliant) package Qualified according AEC Q101 BBY57-02L BBY57-05W BBY57-02V BBY57-02W Type Package Configuration L (nH) Marking S BBY57-02L TSLP-2 single 0.4 55 BBY57-02V SC79 single 0.6 5 BBY57-02W SCD80 single 0.6 55 BBY57-05W SOT323 common cathode 1.4 D5s Maximum Ratings at T = 25C, unless otherwise specified A Parameter Symbol Value Unit 10 V Diode reverse voltage V R 20 mA Forward current I F C Operating temperature range T -55 ... 125 op Storage temperature T -55 ... 150 stg 1 Pb-containing package may be available upon special request 1 2007-04-20BBY57... Electrical Characteristics at T = 25C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. DC Characteristics Reverse current I nA R V = 8 V - - 10 R V = 8 V, T = 85 C - - 100 R A AC Characteristics pF Diode capacitance C T V = 1 V, f = 1 MHz 16.5 17.5 18.6 R V = 2.5 V, f = 1 MHz - 9.35 - R V = 3 V, f = 1 MHz - 7 - R V = 4 V, f = 1 MHz 4 4.7 5.5 R - 2.45 - Capacitance ratio C /C T1 T3 V = 1 V, V = 3 V, f = 1 MHz R R 3 3.7 4.5 Capacitance ratio C /C T1 T4 V = 1 V, V = 4 V, f = 1 MHz R R Series resistance r S V = 1 V, f = 470 MHz, BBY57-02L - 0.35 - R V = 1 V, f = 470 MHz, all others - 0.3 - R 2 2007-04-20