BCR 400W H6327 Infineon

BCR400W Active Bias Controller Characteristics Supplies stable bias current even at low battery 3 2 voltage and extreme ambient temperature variation 4 1 Low voltage drop of 0.7V Application notes 4 3 Stabilizing bias current of NPN transistors and FET s from less than 0.2mA up to more than 200mA 1 2 Ideal supplement for Sieget and other transistors EHA07188 also usable as current source up to 5mA 1) Pb-free (RoHS compliant) package Qualified according AEC Q101 Type Marking Pin Configuration Package BCR400W W4s 1=GND/E 2=Contr/B 3V 4=Rext/C SOT343 NPN NPN S NPN (E , B , C are electrodes of a stabilized NPN transistor) NPN NPN NPN Maximum Ratings Parameter Symbol Value Unit Source voltage V 18 V S Control current I 10 mA Contr. Control voltage V 16 V Contr. Reverse voltage between all terminals V 0.5 R P 330 mW Total power dissipation, T = 117 C tot S Junction temperature T 150 C j Storage temperature T -65 ... 150 stg Thermal Resistance 2) Junction - soldering point R 100 K/W thJS 1 Pb-containing package may be available upon special request 2 For calculation of R please refer to Application Note Thermal Resistance thJA 2007-05-29 1BCR400W Electrical Characteristics at T =25C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. DC Characteristics I Additional current consumption - 20 40 A 0 V = 3 V S I Lowest stabilizing current - 0.1 - mA min V = 3 V S DC Characteristics with stabilized NPN-Transistors V Lowest sufficient battery voltage - 1.6 - V Smin I (NPN) < 0.5mA B V Voltage drop (V - V ) - 0.65 - drop S CE I = 25 mA C h / Change of I versus h I /I - 0.08 - FE C FE C C h h = 50 FE FE V /V Change of I versus V I /I - 0.15 - S S C S C C V = 3 V S Change of I versus T %/K I /I - 0.2 - C A C C 2007-05-29 2