BCR 410W H6327 Infineon

BCR410W Active Bias Controller Characteristics 3 Supplies stable bias current from 1.8V operating 2 4 voltage on 1 Low voltage drop: 110mV for 10mA collector currrent Application notes Stabilizing bias current of NPN transistors and FET s from 100A to 20mA Ideal supplement for Sieget and other transistors 1) Pb-free (RoHS compliant) package Qualified according AEC Q101 Type Marking Pin Configuration Package BCR410W W8s 1= Vs 2=GND 3=Iout 4=Sense SOT343 Maximum Ratings Parameter Symbol Value Unit Supply voltage V 18 V S Output current I 0.5 mA out Total power dissipation, T = 110 C P 100 mW S tot Junction temperature T 150 C j Storage temperature T -65 ... 150 stg Thermal Resistance 2) Junction - soldering point R 470 K/W thJS 1 Pb-containing package may be available upon special request 2 For calculation of R please refer to Application Note Thermal Resistance thJA 2007-05-29 1BCR410W Electrical Characteristics at T = 25C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. DC Characteristics Additional current consumption I - 200 400 A 0 V = 3 V S DC Characteristics with stabilized NPN-Transistors Lowest sufficient battery voltage V - 1.8 - V Smin Voltage drop V - 110 - mV drop I = 10 mA C Change of I versus h - tbd - h / I /I C FE FE C C h = 50 h FE FE Change of I versus V - 2 - %/V I /I C S C C V = 3 V S Change of I versus T - 0.15 - %/K I /I C A C C 2007-05-29 2