BFP780 High linearity RF medium power transistor Product description The BFP780 is a single stage high linearity and high gain driver amplifier based on NPN silicon germanium technology. Feature list High maximum RF input power P = 20 dBm RFin,max Minimum noise figure NF = 1.2 dB at 900 MHz, 5 V, 30 mA min OIP = 34.5 dBm at 900 MHz, 5 V, 90 mA 3 OP = 23 dBm at 900 MHz, 5 V, 90 mA 1dB Product validation Qualified for industrial applications according to the relevant tests of JEDEC47/20/22. Potential applications Commercial and industrial wireless infrastructure ISM band medium power amplifiers and drivers Automated test equipment UHF television, CATV and DBS Device information Table 1 Part information Product name / Ordering code Package Pin configuration Marking Pieces / Reel BFP780 / BFP780H6327XTSA1 SOT343 1 = B 2 = E 3 = C 4 = E R1s 3000 Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions Datasheet Please read the Important Notice and Warnings at the end of this document v4.0 www.infineon.com 2018-09-26BFP780 High linearity RF medium power transistor Table of contents Table of contents Product description 1 Feature list . 1 Product validation . 1 Potential applications 1 Device information . 1 Table of contents . 2 1 Absolute maximum ratings 3 2 Recommended operating conditions 4 3 Thermal characteristics . 5 4 Electrical performance in test fixture 6 4.1 DC parameter table 6 4.2 AC parameter tables . 6 4.3 Characteristic DC diagrams . 9 4.4 Characteristic AC diagrams 11 5 Package information SOT343 .18 Revision history . 19 Disclaimer 20 Datasheet 2 v4.0 2018-09-26