BGA5M1BN6E6327XTSA1 Infineon

BGA5M1BN6 BGA5M1BN6 18dB High Gain Low Noise Amplifier for LTE Midband Features Operating frequencies: 1805 - 2200 MHz Insertion power gain: 19.3 dB Insertion Loss in bypass mode: 4.7 dB Low noise figure: 0.65 dB Low current consumption: 9.5 mA Multi-state control: Bypass- and high gain-Mode 2 0.7 x 1.1 mm Ultra small TSNP-6-10 leadless package RF output internally matched to 50 Ohm Low external component count Application The LTE data rate can be significantly improved by using the Low Noise Amplifier. The integrated bypass function increases the overall system dynamic range and leads to more flexibility in the RF front-end. In high gain mode the LNA offers best Noise Figure to ensure high data rates even on the LTE cell edge. Closer to the basestation the bypass mode can be activated reducing current consumption. Product Validation Qualified for industrial applications according to the relevant tests of JEDEC47/20/22 Block diagram VCC C AI AO ESD GND BGA5M1BN6 Blockdiagram.vsd Data Sheet Revision 2.2 www.infineon.com 2018-03-15 BGA5M1BN6 18dB High Gain Low Noise Amplifier for LTE Midband Table of Contents Table of Contents Table of Contents 2 1 Features . 3 2 Maximum Ratings . 5 3 Electrical Characteristics . 6 4 Application Information 8 5 Package Information . 9 Data Sheet 2 Revision 2.2 2018-03-15