X-On Electronics has gained recognition as a prominent supplier of BGB 741L7ESD E6327 RF Amplifier across the USA, India, Europe, Australia, and various other global locations. BGB 741L7ESD E6327 RF Amplifier are a product manufactured by Infineon. We provide cost-effective solutions for RF Amplifier, ensuring timely deliveries around the world.

BGB 741L7ESD E6327 Infineon

BGB 741L7ESD E6327 electronic component of Infineon
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Part No.BGB 741L7ESD E6327
Manufacturer: Infineon
Category: RF Amplifier
Description: RF Amplifier RF BIP TRANSISTORS
Datasheet: BGB 741L7ESD E6327 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.166 ea
Line Total: USD 1.17 
Availability - 34442
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
34442
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ : 1
Multiples : 1
1 : USD 1.166
10 : USD 0.8107
100 : USD 0.6677
500 : USD 0.6259
1000 : USD 0.5874
2500 : USD 0.5863
5000 : USD 0.5808
7500 : USD 0.5038

5180
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 100
Multiples : 1
100 : USD 1.072
250 : USD 1.0291
500 : USD 0.9919
1000 : USD 0.9595
2500 : USD 0.9312
5000 : USD 0.9061

5
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 6
Multiples : 1
6 : USD 16.5408

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Type
Operating Frequency
P1dB - Compression Point
Gain
Operating Supply Voltage
NF - Noise Figure
OIP3 - Third Order Intercept
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Operating Supply Current
Packaging
Series
Test Frequency
Brand
Number Of Channels
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Supply Voltage - Max
Supply Voltage - Min
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BGB 741L7ESD E6327 from our RF Amplifier category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BGB 741L7ESD E6327 and other electronic components in the RF Amplifier category and beyond.

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BGB741L7ESD Internally matched general purpose LNA MMIC for 50 MHz- 3.5 GHz applications Product description The BGB741L7ESD is a high performance broadband low noise amplifier (LNA) MMIC based on Infineons silicon germanium carbon (SiGe:C) bipolar technology. Feature list Minimum noise figure NF = 1.05 dB at 2.4 GHz, 3 V, 10 mA min Supply voltage range V = 1.8 to 4.0 V at T = 25 C CC A High RF input power robustness of 20 dBm Integrated ESD protection: 2 kV HBM at all pins Product validation Qualified for industrial applications according to the relevant tests of JEDEC47/20/22. Potential applications Satellite navigation systems (e.g. GPS, GLONASS, BeiDou, Galileo) Wireless communications: WLAN 2.4 GHz and 5-6 GHz bands, broadband LTE or WiMAX LNA ISM applications like RKE and smart meter, as well as for emerging wireless applications such as DVB- Terrestrial Device information Table 1 Part information Product name / Package Pin configuration Marking Pieces / Reel Ordering code BGB741L7ESD / TSLP-7-1 1 = V 2 = V 3 = RF 4 = RF AY 7500 CC Bias in out BGB741L7ESDE6327XTSA1 5 = V 6 = Current 7 = Ground Ctrl adjust Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions Datasheet Please read the Important Notice and Warnings at the end of this document v3.0 www.infineon.com 2018-09-26BGB741L7ESD Internally matched general purpose LNA MMIC for 50 MHz- 3.5 GHz applications Functional block diagram Functional block diagram This functional block diagram explains how the BGB707L7ESD is used. The RF power on/off function is controlled by applying V . By using an external resistor R , the pre-set current of 5.5 mA (when R is Ctrl ext ext omitted) can be increased. Base V and collector V voltages are applied to the respective pins RF and RF by B C in out external inductors L and L . B C DC, R ext V CC 6 5 4 1 6 internal V Current Adjust CC Biasing 2 5 7 LB Bias-Out On/Off In LC Out DC, 3 4 V ctrl RF-In RF-Out C C 1 2 3 in out GND 7 (on package backside) BGB7XXL7ESD functional block Figure 1 Functional block diagram Datasheet 2 v3.0 2018-09-26

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8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
Cypress
Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION
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